POWER TRANSISTORS(65W)

8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

DARLINGTON POWER TRANSISTORS(PNP SILICON )

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667

SILICON PNP POWER DARLINGTON TRANSISTOR

SILICON PNP POWER DARLINGTON TRANSISTOR ■ SGS-THOMSON PREFERRED SALESTYPE ■ PNP DARLINGTON ■ INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS: ■ GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

PLASTIC MEDIUM-POWER SILICON TRANSISTORS 8 AND 10 AMPERE DARLINGTON POWER TRANSISTORS PNP SILICON 40-80 VOLTS 65 WATTS

NPN SILICON TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5294, 5296 and 5298 types are silicon NPN transistors that are manufactured by the epitaxial base process and designed for applications that require power amplifier and medium switching capablilites.

Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80

Darlington Power Transistor

[multicomp] 10 Ampere Darlington Power Transistors PNP Silicon 80 Volts 65 Watts Plastic Medium-Power Silicon Transistors are designed for general-purpose amplifier and low speed switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO(sus) = 80V (Minim

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -80V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -2.0V(Max)@ IC= -5A ·Complement to Type 2N6388 APPLICATIONS ·Designed for gener

封装/外壳：TO-220-3 包装：剪切带（CT）带盒（TB） 描述：TRANS PNP DARL 80V 10A TO220 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Darlington Silicon Power Transistors

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Darlington Silicon Power Transistors

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Darlington Silicon Power Transistors

文件：119.55 Kbytes Page：6 Pages

Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, 60??0 V, 65 W

Darlington Silicon Power Transistors Designed for general−purpose amplifier and low speed switching applications. • High DC Current Gain − hFE = 3500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 200 mAdc VCEO(sus) = 60 Vdc (Min) − 2N6667 = 80

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP DARL 80V 10A TO220-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Darlington Silicon Power Transistors

文件：119.55 Kbytes Page：6 Pages