N-Channel, Enhancement-Mode, Vertical DMOS FET

Description 2N6661 is an enhancement-mode (normally-off) tran istor that utilizes a vertical DMOS structure and a wellproven silicon-gate manufacturing process. This comination produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive

N-Channel 80-V and 90-V (D-S) MOSFETS

FEATURES ● Low On-Resistance: 3.6 Ω ● Low Threshold: 1.6 V ● Low Input Capacitance: 35 pF ● Fast Switching Speed: 6 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

TMOS SWITCHING FET TRANSISTORS

TMOS SWITCHING TRANSISTOR

N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR

FEATURES • Switching Regulators • Converters • Motor Drivers

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N6660 and 2N6661 are enhancement mode (normally-off) transistors that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors,

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

2N6661 • VDSS = 90V , ID = 0.9A, RDS(ON) = 4.0Ω • Fast Switching • Low Threshold Voltage (Logic Level) • Low CISS • Integral Source-Drain Body Diode • Hermetic Metal TO39 Package • High Reliability Screening Options Available

90V, 4 Ohm, N-Channel, Enhancement-Mode, Vertical DMOS FET

2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature co Free from secondary breakdown \nLow power drive requirement \nEase of paralleling \nLow CISS and fast switching speeds \nExcellent thermal stability \nIntegral source-drain diode \nHigh input impedance and high gain;

MOSFETs and JFETs

N-Channel Enhancement-Mode Vertical DMOS FETs

文件：395.58 Kbytes Page：3 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：82.73 Kbytes Page：3 Pages

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes Page：6 Pages

N-Channel 90 V (D-S) MOSFET

·Military Qualified\n·Low On-Resistence: 3.6 Ω\n·Low Threshold: 1.6 V;

N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION This enhancement-mode (normally-off) vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening options are a

DUAL N?밅HANNEL ENHANCEMENT MODE

DESCRIPTION These Dual enhancement-mode (normally-off) vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High Reliability Screening optio

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：82.73 Kbytes Page：3 Pages

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes Page：6 Pages

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes Page：6 Pages

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes Page：6 Pages

N-Channel 90 V (D-S) MOSFET

文件：130.4 Kbytes Page：6 Pages

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：730.33 Kbytes Page：3 Pages