DESCRIPTION

These Dual enhancement-mode (normally-off) vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High Reliability Screening options are available.

FEATURES

• Faster switching

• Low Ciss

• Integral Source-Drain Diode

• High Input Impedance and High Gain