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V401价格

参考价格：￥22.9937

型号：V401 品牌：Flambeau 备注：这里有V401多少钱，2025年最近7天走势，今日出价，今日竞价，V401批发/采购报价，V401行情走势销售排行榜，V401报价。

型号	功能描述	生产厂家&企业	LOGO
V40100C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C-E3_V01	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100CI	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100CI_V01	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100CI-M3SLASHP	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G-E3_V01	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100PGW	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100PGW_V01	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40120C	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40120C	Powerpack MOS Schottky Barrier Rectifier Features · Trench Mos Schottky Barrier · Guardring for overvoltage Protection · Low Forward Voltage Drop · Low Reverse Leakage Current · High Surge Current Capability · Plastic Material has UL Flammability Classification 94V-O	DAESAN	DAESAN
V40120C	Schottky Barrier Rectifier FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Low Power Loss/High Efficiency ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation	ISC 无锡固电	ISC
V40120C_V01	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40120CI	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40120CI_V01	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40120CI-M3SLASHP	Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40150C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40150C-E3_V01	Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40170C-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40170C-M3_V01	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40170PW-M3	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40170PW-M3_V01	Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40120C	VISHAY全系列库存真实库存原装现货文件：156.432 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体 PDF上传者：深圳市千度贸易有限公司	Vishay
V40100C	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：138.83 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C_11	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C_12	Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C_15	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：131.02 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C_15	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：138.83 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：160.65 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C-E3/4W	Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C-E3_15	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：155.39 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C-E3SLASH4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C-E3SLASH4W	Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100CHM3/4W	封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：DIODE SCHOTTKY 40A 100V TO-220AB 分立半导体产品二极管 - 整流器 - 阵列	ETC 知名厂家	ETC
V40100CHM3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100CI	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：136.08 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100CI-M3/P	封装/外壳：TO-220-3 包装：管件描述：40A 100V TRENCH SKY RECT 分立半导体产品二极管 - 整流器 - 阵列	ETC 知名厂家	ETC
V40100CI-M3/P	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：136.08 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100C-M3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 文件：167.61 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.76 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G_11	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.76 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G_12	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G-E3	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：161.52 Kbytes Page：6 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 文件：167.61 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G-E3_15	Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：151.39 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G-E3SLASH4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 文件：167.61 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G-E3SLASH4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100GHM3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.76 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100G-M3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.76 Kbytes Page：5 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100K	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.72 Kbytes Page：4 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100K_15	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.7 Kbytes Page：4 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100K_15	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：124.18 Kbytes Page：4 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100K-E3-4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：132.72 Kbytes Page：4 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay
V40100L-F	Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：7 Pages	VishayVishay Siliconix 威世科技威世科技半导体	Vishay

V401产品属性

类型
描述
型号
V401
功能描述
罩类、盒类及壳类产品 8-3/8x4-1/2x1-3/4(0.959cf)1compartmnt
RoHS
否
制造商
Bud Industries
产品
Boxes
外部深度
6.35 mm
外部宽度
6.35 mm
外部高度
2.56 mm NEMA
额定值
IP
材料
Acrylonitrile Butadiene Styrene(ABS)
颜色
Red

V401供应商更多...

更新时间：2025-8-18 20:03:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威雅利发展有限公司	V40100C-E3/4W	VISHAY	1221+	TO220	45	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市金芯世纪电子有限公司	V40100C-E3/4W	VISHAY/威世	22+	TO-220	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	V40100C-E3	VISHAY/威世	25+	TO220	54648	百分百原装现货实单必成欢迎询价	询价
深圳市得捷芯城科技有限公司	V40100C-E3/4W	Vishay(威世)	24+	标准封装	9648	原厂直销,大量现货库存,交期快。价格优,支持账期	询价
深圳市斌能达电子科技有限公司	V40100C-E3/4W	VISHAY/威世	24+	TO-220AB	6000	全新原装深圳仓库现货有单必成	询价
深圳市弘扬芯城科技有限公司	V40100C-E3/4W	VISHAY(威世)	2024+	TO-220-3	500000	诚信服务,绝对原装原盘	询价
中天科工半导体（深圳）有限公司	V40100C-E3/4W	VISHAY	20+	TO220-3	38560	原装优势主营型号-可开原型号增税票	询价
深圳市润联芯城科技有限公司	V40100C-E3/4W	VISHAY/威世	21+	TO-220	114850	只做原装正品	询价
深圳市明嘉莱科技有限公司	V40100C-E3/4W	VISHAY/威世	25+	TO220	860000	明嘉莱只做原装正品现货	询价
深圳市嵩宏达科技有限公司	V40100C-E3/4W肖特基二极管	VISHAY/威世	24+	TO-220	6000	全新原装,一手货源,全场热卖!	询价

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V375A28C600A
V375A28C600A
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DdatasheetPDF页码索引

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V401价格

V401产品属性

V401供应商更多...

V401芯片相关品牌

V401规格书下载地址

V401参数引脚图相关

V401数据表相关新闻

V42254-B2235-C488

V42254-B2235-C963

V42254-B2240-M780

V375B5H200BL 电源模块 进口原装现货。

V33CH8

V375A28C600A

DdatasheetPDF页码索引

V375B5H200BL 电源模块进口原装现货。