位置：首页 > IC中文资料第5447页 > V40100G
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V40100G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 文件：167.61 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 |   | |
V40100G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.76 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V40100G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V40100G | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.76 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：161.52 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 文件：167.61 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：151.39 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A 文件：167.61 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：163.71 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 20A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.76 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：131.76 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas | STMICROELECTRONICS 意法半导体 | | ||
32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas | STMICROELECTRONICS 意法半导体 | | ||
32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas | STMICROELECTRONICS 意法半导体 | | ||
32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas | STMICROELECTRONICS 意法半导体 | | ||
1M x 40 Bit Dynamic Random Access Memory Module 1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications | MOTOROLA 摩托罗拉 | |
V40100G产品属性
- 类型
描述
- 型号
V40100G
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-220 |
12000 |
原装正品真实现货杜绝虚假 |
|||
Vishay |
26+ |
SOT-523 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
VISHAY/威世 |
25+ |
TO220 |
32360 |
VISHAY/威世全新特价V40100G-E3/4W即刻询购立享优惠#长期有货 |
|||
VISHAY |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
VISHAY |
25+ |
TO220 |
50 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY/威世 |
23+ |
TO220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
51000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
TO220 |
125000 |
一级代理原装正品,价格优势,长期供应! |
V40100G规格书下载地址
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