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V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

VISHAYVishay Siliconix

威世威世科技公司

V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件:167.61 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.76 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

Trench MOS Schottky technology\n Low forward voltage drop, low power losses\n High efficiency operation\n\n ;

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

分立 ·Trench MOS Schottky technology\n·Low forward voltage drop, low power losses\n·High efficiency operation\n;

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.76 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:161.52 Kbytes Page:6 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件:167.61 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:151.39 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件:167.61 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 20A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.76 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.76 Kbytes Page:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER

DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas

STMICROELECTRONICS

意法半导体

32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER

DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas

STMICROELECTRONICS

意法半导体

32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER

DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas

STMICROELECTRONICS

意法半导体

32-STAGE STATIC LEFT/RIGHT SHIFT REGISTER

DESCRIPTION The HCC40100B (extended temperature range) and HCF40100B (intermediate temperature range) are monolithic integrated circuits, available in 16-lead dual in-line plastic or ceramic package and plastic micro package. The HCC/HCF40100B is a 32-stage shift register containing 32 D-type mas

STMICROELECTRONICS

意法半导体

1M x 40 Bit Dynamic Random Access Memory Module

1M x 40 Bit Dynamic Random Access Memory Module for Error Correction Applications

MOTOROLA

摩托罗拉

V40100G产品属性

  • 类型

    描述

  • 型号

    V40100G

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

更新时间:2026-8-4 13:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
26+
TO-220
43600
全新原装现货,假一赔十
VISHAY/威世
25+
TO-220
90000
全新原装现货
Vishay General Semiconductor -
25+
TO-220-3
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VISHAY/威世
23+
TO220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VIS
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
VISHAY/威世
26+
SMD
8635
一级代理优势现货,全新正品直营店
VISHAY/威世
25+
TO-220
12000
原装正品真实现货杜绝虚假
VISHAY/威世
25+
TO220
32360
VISHAY/威世全新特价V40100G-E3/4W即刻询购立享优惠#长期有货
Vishay
26+
SOT-523
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
26+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择

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