型号 功能描述 生产厂家&企业 LOGO 操作
V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件:167.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.76 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

V40100G

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

VishayVishay Siliconix

威世科技威世科技半导体

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106

VishayVishay Siliconix

威世科技威世科技半导体

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.76 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:161.52 Kbytes Page:6 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件:167.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

封装/外壳:TO-220-3 包装:管件 描述:DIODE ARRAY SCHOTTKY 100V TO220 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High Voltage Trench MOS Barrier Schottky Rectifier

文件:151.39 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

文件:167.61 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:163.71 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

封装/外壳:TO-220-3 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:DIODE SCHOTTKY 20A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列

ETC

知名厂家

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.76 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件:131.76 Kbytes Page:5 Pages

VishayVishay Siliconix

威世科技威世科技半导体

Toroidal Surface Mount Inductors

DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3µH to 330µH ■ Surface Mounting

CANDD

Active Optical Cable QSFP 40Gbps, 100m, MSA Compatible

Features • Full-Duplex 4 channel parallel active optical cable, supporting 42 Gbps links • Up to 10.5 Gbps Data rate per channel • Maximum link length of 100m available • High Reliability 850nm VCSEL technology • Electrically hot-puggable • Electrical interface compliant to SFF-8431 • Case

L-COM

英飞畅

CMOS 32-Stage Static Left/Right Shift Register

Description CD40100BMS is a 32-Stage shift register containing 32 D-type master-slave flip-flops. The data present at the SHIFT RIGHT INPUT is transferred into the first register stage synchronously with the positive CLOCK edge, provided the LEFT/RIGHT CONTROL is at a low level, the RECIRCUL

Intersil

100 W, DC - 3.0 GHz, 50 V, GaN HEMT

Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high g

WOLFSPEED

Toroidal Surface Mount Inductors

文件:103.84 Kbytes Page:2 Pages

MuRataMurata Manufacturing Co., Ltd.

村田村田制作所

V40100G产品属性

  • 类型

    描述

  • 型号

    V40100G

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.42 V at IF = 5 A

更新时间:2025-8-18 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY/威世
24+
NA/
7064
原厂直销,现货供应,账期支持!
VISHAY
2016+
TO220
9000
只做原装,假一罚十,公司可开17%增值税发票!
VISHAY/威世
25+
TO220
32360
VISHAY/威世全新特价V40100G-E3/4W即刻询购立享优惠#长期有货
VISHAY
1822+
TO-220F
9852
只做原装正品假一赔十为客户做到零风险!!
VISHAY/威世
2023+
SMD
8635
一级代理优势现货,全新正品直营店
VISHAY
25+
TO-TO-220
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VISHAY/威世
23+
TO220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
VIS
23+
TO-220
8560
受权代理!全新原装现货特价热卖!
VISHAY/威世
24+
TO-220
12000
原装正品真实现货杜绝虚假
VISHAY/威世
TO220
125000
一级代理原装正品,价格优势,长期供应!

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