Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：80.61 Kbytes Page：4 Pages

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：87.62 Kbytes Page：4 Pages

封装/外壳：TO-3P-3 整包 包装：散装 描述：DIODE ARRAY SCHOTTKY 100V TO3PW 分立半导体产品 二极管 - 整流器 - 阵列

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：83.31 Kbytes Page：4 Pages

Toroidal Surface Mount Inductors

DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3µH to 330µH ■ Surface Mounting

Active Optical Cable QSFP 40Gbps, 100m, MSA Compatible

Features • Full-Duplex 4 channel parallel active optical cable, supporting 42 Gbps links • Up to 10.5 Gbps Data rate per channel • Maximum link length of 100m available • High Reliability 850nm VCSEL technology • Electrically hot-puggable • Electrical interface compliant to SFF-8431 • Case

CMOS 32-Stage Static Left/Right Shift Register

Description CD40100BMS is a 32-Stage shift register containing 32 D-type master-slave flip-flops. The data present at the SHIFT RIGHT INPUT is transferred into the first register stage synchronously with the positive CLOCK edge, provided the LEFT/RIGHT CONTROL is at a low level, the RECIRCUL

100 W, DC - 3.0 GHz, 50 V, GaN HEMT

Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high g

Toroidal Surface Mount Inductors

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