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V40100C价格
参考价格：￥6.9782
型号：V40100C-E3/4W 品牌：Vishay 备注：这里有V40100C多少钱，2026年最近7天走势，今日出价，今日竞价，V40100C批发/采购报价，V40100C行情走势销售排行榜，V40100C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V40100C | Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.38 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 |   | |
V40100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V40100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
V40100C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：138.83 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：131.02 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：138.83 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：160.65 Kbytes Page：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：155.39 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：136.08 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A | VISHAYVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：40A 100V TRENCH SKY RECT 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：136.08 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Toroidal Surface Mount Inductors DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3µH to 330µH ■ Surface Mounting | CANDD | | ||
Active Optical Cable QSFP 40Gbps, 100m, MSA Compatible Features • Full-Duplex 4 channel parallel active optical cable, supporting 42 Gbps links • Up to 10.5 Gbps Data rate per channel • Maximum link length of 100m available • High Reliability 850nm VCSEL technology • Electrically hot-puggable • Electrical interface compliant to SFF-8431 • Case | L-COM 英飞畅 | | ||
CMOS 32-Stage Static Left/Right Shift Register Description CD40100BMS is a 32-Stage shift register containing 32 D-type master-slave flip-flops. The data present at the SHIFT RIGHT INPUT is transferred into the first register stage synchronously with the positive CLOCK edge, provided the LEFT/RIGHT CONTROL is at a low level, the RECIRCUL | INTERSIL | | ||
100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high g | WOLFSPEED | | ||
Toroidal Surface Mount Inductors 文件：103.84 Kbytes Page：2 Pages | MURATA 村田 | |
V40100C产品属性
- 类型
描述
- 型号
V40100C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2026+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
VISHAY/威世 |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
21+ |
TO-220 |
114850 |
只做原装正品 |
|||
VISHAY |
24+ |
TO-220AB |
3000 |
全新原装环保现货 |
|||
VISHAY |
25+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
VISHAY/威世 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
2025+ |
TO220 |
3827 |
全新原厂原装产品、公司现货销售 |
|||
VISHAY |
21+ |
TO-220AB |
6880 |
只做原装,质量保证 |
|||
VISHAY/威世 |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
|||
VISHAY/威世 |
24+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
V40100C规格书下载地址
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