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V40100C价格
参考价格：￥6.9782
型号：V40100C-E3/4W 品牌：Vishay 备注：这里有V40100C多少钱，2025年最近7天走势，今日出价，今日竞价，V40100C批发/采购报价，V40100C行情走势销售排行榜，V40100C报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
V40100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
V40100C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
V40100C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：138.83 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Low thermal resistance • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：131.02 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：138.83 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：160.65 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：155.39 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A 文件：167.8 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS barrier Schottky Rectifier 文件：157.14 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY 40A 100V TO-220AB 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：136.08 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
封装/外壳：TO-220-3 包装：管件 描述：40A 100V TRENCH SKY RECT 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：136.08 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：140.85 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Toroidal Surface Mount Inductors DESCRIPTION The 4000 series is a range of surface mount toroidal inductors designed for use in switching power supplies and DC/DC converters. The parts are ideal for applications requiring low profile compact components in a surface mount package. FEATURES ■ 3.3µH to 330µH ■ Surface Mounting | CANDD | | ||
Active Optical Cable QSFP 40Gbps, 100m, MSA Compatible Features • Full-Duplex 4 channel parallel active optical cable, supporting 42 Gbps links • Up to 10.5 Gbps Data rate per channel • Maximum link length of 100m available • High Reliability 850nm VCSEL technology • Electrically hot-puggable • Electrical interface compliant to SFF-8431 • Case | L-COM 英飞畅 | | ||
CMOS 32-Stage Static Left/Right Shift Register Description CD40100BMS is a 32-Stage shift register containing 32 D-type master-slave flip-flops. The data present at the SHIFT RIGHT INPUT is transferred into the first register stage synchronously with the positive CLOCK edge, provided the LEFT/RIGHT CONTROL is at a low level, the RECIRCUL | Intersil | | ||
100 W, DC - 3.0 GHz, 50 V, GaN HEMT Description Wolfspeed's CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40100, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high g | WOLFSPEED | | ||
Toroidal Surface Mount Inductors 文件：103.84 Kbytes Page：2 Pages | MuRataMurata Manufacturing Co., Ltd. 村田村田制作所 | |
V40100C产品属性
- 类型
描述
- 型号
V40100C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.38 V at IF = 5 A
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
21+ |
TO-220-3 |
26000 |
只做原装,假一罚十 |
|||
Vishay(威世) |
24+ |
N/A |
11800 |
可配单提供样品 |
|||
VISHAY/威世 |
24+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
VISHAY |
19+ |
TO-220 |
19800 |
||||
VISHAY |
23+/24+ |
TO-220AB |
9865 |
优势库存.原装正品.终端BOM表可配单 |
|||
Vishay(威世) |
2021/2022+ |
标准封装 |
6500 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
VISHAY原装 |
24+ |
TO-220 |
30980 |
原装现货/放心购买 |
|||
VISHAY/威世 |
18+ |
SC-59 |
490 |
正规渠道原装正品 |
|||
VISHAY |
24+ |
TO220 |
2568 |
原装优势!绝对公司现货 |
|||
Vishay(威世) |
24+ |
标准封装 |
9648 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
V40100C规格书下载地址
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DdatasheetPDF页码索引
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