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V40120C价格
参考价格：￥6.8181
型号：V40120C-E3/4W 品牌：Vishay 备注：这里有V40120C多少钱，2026年最近7天走势，今日出价，今日竞价，V40120C批发/采购报价，V40120C行情走势销售排行榜，V40120C报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
V40120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世威世科技公司 |   | |
V40120C | Powerpack MOS Schottky Barrier Rectifier Features · Trench Mos Schottky Barrier · Guardring for overvoltage Protection · Low Forward Voltage Drop · Low Reverse Leakage Current · High Surge Current Capability · Plastic Material has UL Flammability Classification 94V-O | DAESAN | | |
V40120C | Schottky Barrier Rectifier FEATURES ·Guard -Ring for Stress Protection ·Low Forward Voltage ·High Operating Junction Temperature ·Low Power Loss/High Efficiency ·High surge capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
V40120C | VISHAY全系列库存 真实库存原装现货 文件：156.432 Kbytes Page：6 Pages | | ||
V40120C | Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：158.26 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
V40120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
V40120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.75 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
V40120C | Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | |
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICA | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：167.93 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：148.48 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：158.26 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.75 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：167.93 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 120V TO220 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY SCHOTTKY 分立半导体产品 二极管 - 整流器 - 阵列 | ETC 知名厂家 | ETC | | |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：149.75 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A 文件：167.93 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.41 V at IF = 5 A | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：135.92 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High Voltage Trench MOS Barrier Schottky Rectifier 文件：135.92 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：142.32 Kbytes Page：5 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
120 W, RF Power GaN HEMT Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an | WOLFSPEED | | ||
120 W, RF Power GaN HEMT Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga | WOLFSPEED | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | Cree 科锐 | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | Cree 科锐 | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | Cree 科锐 | |
V40120C产品属性
- 类型
描述
- 型号
V40120C
- 制造商
VISHAY
- 制造商全称
Vishay Siliconix
- 功能描述
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
10+ |
TO-220 |
3999 |
只做原装正品 |
|||
VISHAY/威世 |
24+ |
TO-220 |
12000 |
原装正品真实现货杜绝虚假 |
|||
VISHAY |
24+ |
TO220 |
8000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
VISHAY/威世 |
23+ |
TO-220 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
VISHAY/威世 |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
VISHAY/威世 |
23+ |
TO-220-3 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
24+ |
N/A |
39500 |
进口原装现货 支持实单价优 |
|||
Vishay Semiconductor Diodes Di |
22+ |
TO220AB |
9000 |
原厂渠道,现货配单 |
|||
Vishay(威世) |
24+ |
N/A |
11800 |
可配单提供样品 |
V40120C规格书下载地址
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