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RFM1价格

参考价格：￥41.6763

型号：RFM12U7X(TE12L,Q) 品牌：Toshiba 备注：这里有RFM1多少钱，2025年最近7天走势，今日出价，今日竞价，RFM1批发/采购报价，RFM1行情走势销售排行榜，RFM1报价。

型号	功能描述	生产厂家企业	LOGO
RFM10N12	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM10N12	N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device	GESS	GESS
RFM10N15	N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device	GESS	GESS
RFM10N15	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM10N45	10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive	Intersil	Intersil
RFM10N50	10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive	Intersil	Intersil
RFM10P12	P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS P-Channel Enhancement - Mode Power Field-Effect Transistors Features: ■ SOA is power-dissipation limited ■ Nanoseconde switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device	GESS	GESS
RFM10P12	isc P-Channel MOSFET Transistor FEATURES ·Drain Current -ID= -10A@ TC=25℃ ·Drain Source Voltage -VDSS= -120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM10P15	P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS P-Channel Enhancement - Mode Power Field-Effect Transistors Features: ■ SOA is power-dissipation limited ■ Nanoseconde switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device	GESS	GESS
RFM10P15	isc P-Channel MOSFET Transistor FEATURES ·Drain Current -ID= -10A@ TC=25℃ ·Drain Source Voltage -VDSS= -150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM12	UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE Features • Low costing, high performance and price ratio • Tuning free during production • PLL and zero IF technology • Fast PLL lock time • High resolution PLL with 2.5 KHz step • High data rate (up to 115.2 kbps with internal demodulator，with external RC filter highest data rate is 256 kb	HOPE 华普微	HOPE
RFM12N08	12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These	Intersil	Intersil
RFM12N08	12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N08	12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N08	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM12N08L	N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N08L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM12N10	12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These	Intersil	Intersil
RFM12N10	12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N10	12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N10	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM12N10L	N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N10L	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM12N18	12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate driv	Intersil	Intersil
RFM12N18	N-Channel Enhancement Mode Power Field Effect Transistors	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N18	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 180V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM12N20	12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate driv	Intersil	Intersil
RFM12N20	N-Channel Enhancement Mode Power Field Effect Transistors	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM12N20	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM12N35	12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive	Intersil	Intersil
RFM12N40	12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive	Intersil	Intersil
RFM12P08	isc P-Channel MOSFET Transistor FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM12P10	isc P-Channel MOSFET Transistor FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM12U7X	Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf	TOSHIBA 东芝	TOSHIBA
RFM15N05	POWER LOGIC LEVEL MOSFETS [GE SOLID STATE] POWER LOGIC LEVEL MOSFETS	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
RFM15N05	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM15N05L	POWER LOGIC LEVEL MOSFETS [GE SOLID STATE] POWER LOGIC LEVEL MOSFETS	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
RFM15N06	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM15N06L	POWER LOGIC LEVEL MOSFETS [GE SOLID STATE] POWER LOGIC LEVEL MOSFETS	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
RFM15N12	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM15N15	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.15Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM18N08	18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive	Intersil	Intersil
RFM18N08	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM18N10	18A, 80V and 100V, 0.100 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive	Intersil	Intersil
RFM18N10	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control	ISC 无锡固电	ISC
RFM100-3	包装：散装描述：DAILY FACE MASK REUSABLE 工具个人防护装备（PPE）	3M	3M
RFM100-5	包装：散装描述：3M DAILY FACE MASK REUSABLE RFM1 工具个人防护装备（PPE）	3M	3M
RFM10N12	N-CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS	RENESAS 瑞萨	RENESAS
RFM10N12	N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS	GESS	GESS
RFM10N12	N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM10N12	N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM10N15	N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM10N15	N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
RFM10N15	10A 450V AND 500V 0.600 OHM N-CHANNEL POWER MOSFETS	ETC 知名厂家	ETC
RFM110	Embedded EEPROM 文件：682.57 Kbytes Page：18 Pages	HOPE 华普微	HOPE
RFM110W-315S1	Low-Cost Consumer Electronics Applications 文件：611.68 Kbytes Page：22 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
RFM110W-433S1	Low-Cost Consumer Electronics Applications 文件：611.68 Kbytes Page：22 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
RFM113W-315S1	Low-Cost Consumer Electronics Applications 文件：606.91 Kbytes Page：21 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
RFM113W-433S1	Low-Cost Consumer Electronics Applications 文件：606.91 Kbytes Page：21 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
RFM117	Embedded EEPROM 文件：682.57 Kbytes Page：18 Pages	HOPE 华普微	HOPE

RFM1产品属性

类型
描述
型号
RFM1
制造商
GESS
制造商全称
GESS
功能描述
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

RFM1供应商更多...

更新时间：2025-12-22 23:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	RFM110-433S1	HOPERF	24+	NA/	35	优势代理渠道,原装正品,可全系列订货开增值税票	询价
上海意淼电子科技有限公司	RFM10P12L	UCC	23+	SOP8	12000	全新原装假一赔十	询价
深圳市粤骏腾电子科技有限公司	RFM110-315S1	HOPERF	24+		986000	大批量供应优势库存热卖	询价
中天科工半导体（深圳）有限公司	RFM10N12	INTERSIL	专业铁帽	TO-3	67500	铁帽原装主营-可开原型号增税票	询价
千层芯半导体(深圳)有限公司	RFM110-315S1	HOPERF	24+	SMD	20000	一级代理原装现货假一罚十	询价
深圳市星宇佳科技有限公司	RFM10N45	HARRIS(哈利斯)	20+	TO-3	3000		询价
深圳市恒达亿科技有限公司	RFM10N12	HARRIS	25+	TO-3	4500	全新原装、诚信经营、公司现货销售!	询价
深圳市创新迹电子有限公司	RFM110-433S1	HOPERF/华普微	22+	MODULE/模块	20000	公司只做原装品质保障	询价
深圳市科达星科技有限公司	RFM10N12	INTERSIL	24+	TO.252-2.5	37500	原装正品现货,价格有优势!	询价
贸泽芯城（深圳）电子科技有限公司	RFM10N12	ISC/固电	23+	TO-3	11200	原厂授权一级代理、全球订货优势渠道、可提供一站式BO	询价

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RFX-21-27.0M50IY18晶体
微型晶体的高度仅为 0.45 mm
2023-3-21
RFID应答器 PCF7936AA/3851/C/6
供应原装现货RFID应答器 PCF7936AA/PLLMC/Stick-Coin//3851/C/6, SOT385
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可立即发货
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RFM1价格

RFM1产品属性

RFM1供应商更多...

RFM1芯片相关品牌

RFM1规格书下载地址

RFM1参数引脚图相关

RFM1数据表相关新闻

RFX-21-27.0M50IY18晶体

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RFGA0024TR13

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RFP18N08

RFR-6200(CD90-V4381-1FTR全新原装现货

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