10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC10N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanc

10A, 500V N-CHANNEL POWER MOSFET

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10A 500V N-channel enhanced field effect transistor

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10A 500V N-channel enhanced field effect transistor

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500V N-Channel MOSFET Improved dv/dt capability

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