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RFM12价格
参考价格:¥41.6763
型号:RFM12U7X(TE12L,Q) 品牌:Toshiba 备注:这里有RFM12多少钱,2025年最近7天走势,今日出价,今日竞价,RFM12批发/采购报价,RFM12行情走势销售排行榜,RFM12报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFM12 | UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE Features • Low costing, high performance and price ratio • Tuning free during production • PLL and zero IF technology • Fast PLL lock time • High resolution PLL with 2.5 KHz step • High data rate (up to 115.2 kbps with internal demodulator,with external RC filter highest data rate is 256 kb | HOPE 华普微 | ||
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These | Intersil | |||
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These | Intersil | |||
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate driv | Intersil | |||
N-Channel Enhancement Mode Power Field Effect Transistors
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 180V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate driv | Intersil | |||
N-Channel Enhancement Mode Power Field Effect Transistors
| NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive | Intersil | |||
12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive | Intersil | |||
isc P-Channel MOSFET Transistor FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
isc P-Channel MOSFET Transistor FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
Bipolar Small-Signal Transistors MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf | TOSHIBA 东芝 | |||
Universal ISM Band FSK Transceiver 文件:1.53637 Mbytes Page:41 Pages | HOPE 华普微 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Universal ISM Band FSK Transceiver 文件:1.53637 Mbytes Page:41 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Universal ISM Band FSK Transceiver 文件:1.53637 Mbytes Page:41 Pages | HOPE 华普微 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Universal ISM Band FSK Transceiver 文件:1.53637 Mbytes Page:41 Pages | HOPE 华普微 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:418.25 Kbytes Page:11 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE 文件:339.14 Kbytes Page:8 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Trans MOSFET N-CH 80V 12A | ETC 知名厂家 | ETC | ||
Trans MOSFET N-CH 100V 12A | ETC 知名厂家 | ETC | ||
Trans MOSFET N-CH 100V 12A | ETC 知名厂家 | ETC | ||
P-CHANNEL ENHANCEMENT-MODE 文件:676.83 Kbytes Page:12 Pages | GE | |||
VHF- and UHF-band Amplifier Applications 文件:182.35 Kbytes Page:5 Pages | TOSHIBA 东芝 |
RFM12产品属性
- 类型
描述
- 型号
RFM12
- 制造商
HOPERF
- 制造商全称
HOPERF
- 功能描述
UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA(东芝) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
HOPE |
24+ |
MODULEFSK |
100 |
大批量供应优势库存热卖 |
|||
HAR |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
RFM |
23+ |
NA |
8215 |
原厂原装 |
|||
HOPE |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
HARRIS(哈利斯) |
20+ |
TO-3 |
3000 |
||||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
TOSHIBA |
22+ |
PW-X |
20000 |
公司只做原装 品质保障 |
|||
HOPERF/华普微 |
25+ |
SMD |
15173 |
全新正品价格优势 |
|||
TOSHIBA 光耦 集成电路 |
Original 元件 |
原厂原封 |
10050 |
TOSHIBA现货原装△-更多数量咨询样品批量支持;详询 |
RFM12规格书下载地址
RFM12参数引脚图相关
- s9018
- s9015
- s9014
- s9013
- s8550
- s8050三极管
- s8050
- s7-200
- s7200
- s5230
- s510b
- s1100
- s101
- s007
- rtl8100c
- rs触发器
- rohs指令
- ROHS
- ricoh
- rf开关
- RFP-DL2
- RFP70N06
- RFP50N06
- RFP12N10L
- RFN-7668
- RFN-7652
- RFN-7649
- RFN-7648
- RFN-7642
- RFN30TS6DGC11
- RFN20NS6STL
- RFN1L7STE25
- RFN1L6STE25
- RFN10B3STL
- RFM68W-868S2
- RFM68W-433-S2
- RFM67W-868S2
- RFM67W-433S2
- RFM65W
- RFM65CW
- RFM64W
- RFM64B
- RFM63B
- RFM60
- RFM5P15
- RFM5P12
- RFM50
- RFM4N40
- RFM4N35
- RFM42B
- RFM3N50
- RFM3N45
- RFM31B
- RFM26W-1D28
- RFM26W
- RFM24W
- RFM23BP
- RFM12U7X(TE12L,Q)
- RFM12BP
- RFM12B
- RFM119W
- RFM119B
- RFM117
- RFM110
- RFM08U9X(TE12L,Q)
- RFM03U3CT(TE12L)
- RFM02
- RFM01U7P(TE12L,F)
- RFM01
- RFLW5N
- RFLW3N
- RFLPF2012090K0T
- RFLPF1608060A07B1U
- RFLABKIT-001
- RFL8
- RFL6000
- RFL6
- RFL4N15
- RFL4N12
- RFL-4
- RFL2N06
- RFL2N05
- RFL-2BK
- RFL-2
- RFL1P10
- RFL1P08
- RFL1N20
- RFL1N18
- RFIDTAGPALLET
- RFIDTAGBAG
- RFIDR-GM-366
- RFID125-STI-5
- RFID125-KEY-5
- RFID125-ISO-5
- RFI97-13
- RFI95-14
- RFI95-13
- RFI77-6
- RFI77-2
- RFI75-6
RFM12数据表相关新闻
RFX-21-27.0M50IY18晶体
微型晶体的高度仅为 0.45 mm
2023-3-21RFID应答器 PCF7936AA/3851/C/6
供应原装现货RFID应答器 PCF7936AA/PLLMC/Stick-Coin//3851/C/6, SOT385
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RFGA0024TR13射频放大器 50MHz-1000MHz 20.4dB
2021-2-3RF-HDT-DVBB-N2 包覆成型应答器 RFID发射应答器
RF-HDT-DVBB-N2 包覆成型应答器 RFID发射应答器
2020-7-14RFP18N08
?RFP18N08,全新原装当天发货或门市自取0755-82732291.
2020-4-22RFR-6200(CD90-V4381-1FTR全新原装现货
可立即发货
2019-9-24
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