RFM12价格

参考价格:¥41.6763

型号:RFM12U7X(TE12L,Q) 品牌:Toshiba 备注:这里有RFM12多少钱,2025年最近7天走势,今日出价,今日竞价,RFM12批发/采购报价,RFM12行情走势销售排行榜,RFM12报价。
型号 功能描述 生产厂家 企业 LOGO 操作
RFM12

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

Features • Low costing, high performance and price ratio • Tuning free during production • PLL and zero IF technology • Fast PLL lock time • High resolution PLL with 2.5 KHz step • High data rate (up to 115.2 kbps with internal demodulator,with external RC filter highest data rate is 256 kb

HOPE

华普微

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

Intersil

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

Intersil

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate driv

Intersil

N-Channel Enhancement Mode Power Field Effect Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 180V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate driv

Intersil

N-Channel Enhancement Mode Power Field Effect Transistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

Intersil

12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive

Intersil

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -12A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

ISC

无锡固电

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBA

东芝

Universal ISM Band FSK Transceiver

文件:1.53637 Mbytes Page:41 Pages

HOPE

华普微

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Universal ISM Band FSK Transceiver

文件:1.53637 Mbytes Page:41 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Universal ISM Band FSK Transceiver

文件:1.53637 Mbytes Page:41 Pages

HOPE

华普微

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Universal ISM Band FSK Transceiver

文件:1.53637 Mbytes Page:41 Pages

HOPE

华普微

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:418.25 Kbytes Page:11 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

文件:339.14 Kbytes Page:8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Trans MOSFET N-CH 80V 12A

ETC

知名厂家

Trans MOSFET N-CH 100V 12A

ETC

知名厂家

Trans MOSFET N-CH 100V 12A

ETC

知名厂家

P-CHANNEL ENHANCEMENT-MODE

文件:676.83 Kbytes Page:12 Pages

GE

VHF- and UHF-band Amplifier Applications

文件:182.35 Kbytes Page:5 Pages

TOSHIBA

东芝

RFM12产品属性

  • 类型

    描述

  • 型号

    RFM12

  • 制造商

    HOPERF

  • 制造商全称

    HOPERF

  • 功能描述

    UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE

更新时间:2025-12-22 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TOSHIBA(东芝)
24+
NA/
8735
原厂直销,现货供应,账期支持!
HOPE
24+
MODULEFSK
100
大批量供应优势库存热卖
HAR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
RFM
23+
NA
8215
原厂原装
HOPE
24+
SMD
20000
一级代理原装现货假一罚十
HARRIS(哈利斯)
20+
TO-3
3000
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
TOSHIBA
22+
PW-X
20000
公司只做原装 品质保障
HOPERF/华普微
25+
SMD
15173
全新正品价格优势
TOSHIBA 光耦 集成电路
Original 元件
原厂原封
10050
TOSHIBA现货原装△-更多数量咨询样品批量支持;详询

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