位置:首页 > IC中文资料第18页 > RFM12N10
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RFM12N10 | 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These | INTERSIL | ||
RFM12N10 | 12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
RFM12N10 | 12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
RFM12N10 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | ||
RFM12N10 | Trans MOSFET N-CH 100V 12A | ETC 知名厂家 | ETC | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
N-Channel Logic Level Power Field-Effect Transistors (L2 FET) The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | |||
Trans MOSFET N-CH 100V 12A | ETC 知名厂家 | ETC | ||
N-Channel 100 V (D-S) MOSFET APPLICATIONS • Primary Side Switch | EVVOSEMI 翊欧 | |||
N-Channel 100 V (D-S) MOSFET 文件:443.06 Kbytes Page:5 Pages | UMW 友台半导体 | |||
N-Channel 100 V (D-S) MOSFET 文件:1.68514 Mbytes Page:7 Pages | VBSEMI 微碧半导体 | |||
12A, 100V N-CHANNEL POWER MOSFET 文件:194.56 Kbytes Page:5 Pages | UTC 友顺 | |||
N-Channel 100 V (D-S) MOSFET 文件:1.00844 Mbytes Page:7 Pages | VBSEMI 微碧半导体 |
RFM12N10产品属性
- 类型
描述
- 型号
RFM12N10
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TOSHIBA |
13+ |
PW-X |
6658 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SMD |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
HARRIS(哈利斯) |
20+ |
TO-3 |
3000 |
||||
HAR |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
TOSHIBA |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
Toshiba Semiconductor and Stor |
22+ |
PWX |
9000 |
原厂渠道,现货配单 |
|||
TOSHIBA |
13+ |
PW-X |
5728 |
||||
24+ |
N/A |
3340 |
|||||
TOSHIBA 光耦 集成电路 |
Original 元件 |
原厂原封 |
10050 |
TOSHIBA现货原装△-更多数量咨询样品批量支持;详询 |
|||
HARRIS |
23+ |
2脚铁帽 |
5000 |
原装正品,假一罚十 |
RFM12N10芯片相关品牌
RFM12N10规格书下载地址
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2019-9-24
DdatasheetPDF页码索引
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