12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These

N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver

N-Channel 100 V (D-S) MOSFET

APPLICATIONS • Primary Side Switch

N-Channel 100 V (D-S) MOSFET

文件：443.06 Kbytes Page：5 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.68514 Mbytes Page：7 Pages

12A, 100V N-CHANNEL POWER MOSFET

文件：194.56 Kbytes Page：5 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.00844 Mbytes Page：7 Pages