位置：首页 > IC中文资料第8538页 > RFM10N12
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RFM10N12 | N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device | GESS GE Solid State |   | |
RFM10N12 | N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
RFM10N12 | N-Channel Enhancement-Mode Power Field-Effect Transistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |
RFM10N12产品属性
- 类型
描述
- 型号
RFM10N12
- 制造商
GESS
- 制造商全称
GESS
- 功能描述
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HARRIS(哈利斯) |
20+ |
TO-3 |
3000 |
||||
HARRIS |
25+ |
TO-3 |
4500 |
全新原装、诚信经营、公司现货销售! |
|||
HOPERF |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
24+ |
N/A |
3310 |
|||||
HARRIS |
94+ |
174 |
优势货源原装正品 |
||||
INTERSIL |
专业铁帽 |
TO-3 |
67500 |
铁帽原装主营-可开原型号增税票 |
|||
HARRIS |
1999 |
TO-3 |
1965 |
原装现货海量库存欢迎咨询 |
|||
HARRIS |
2020+ |
N/A |
174 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
NA |
NA |
1009 |
专营CANCDIP |
||||
ISC/固电 |
23+ |
TO-3 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
RFM10N12规格书下载地址
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DdatasheetPDF页码索引
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