N-Channel Logic Level Power Field-Effect Transistors (L2 FET)

The RFM12N08L and RFM12N10L and the RFP12N08L and RFP12N10L are n-channel enhancement-mode silicon-gate power field-effect transistors specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid driver

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Trans MOSFET N-CH 100V 12A

N-Channel 100 V (D-S) MOSFET

APPLICATIONS • Primary Side Switch

N-Channel 100 V (D-S) MOSFET

文件：443.06 Kbytes Page：5 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.68514 Mbytes Page：7 Pages

12A, 100V N-CHANNEL POWER MOSFET

文件：194.56 Kbytes Page：5 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.00844 Mbytes Page：7 Pages