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PBSS价格
参考价格：￥0.5457
型号：PBSS2515E,115 品牌：NXP 备注：这里有PBSS多少钱，2025年最近7天走势，今日出价，今日竞价，PBSS批发/采购报价，PBSS行情走势销售排行榜，PBSS报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
15 V low VCEsat NPN double transistor | ETC 知名厂家 | ETC |   | |
15 V, 0.5 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
15 V, 0.5 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
15 V low VCEsat NPN transistor | ETC 知名厂家 | ETC | | |
15 V, 0.5 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
15 V, 0.5 A NPN low VCEsat (BISS) transistor FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted-circuitboardrequirements. APPLICATIONS •Powermanagement: –DC-DCconverter –Supplylineswitching –Batterycharg | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
15 V low VCE(sat) NPN/PNP transistor FEATURES •300mWtotalpowerdissipation •Verysmall1.6×1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improvedthermalbehaviourduetoflatlead •ReplacestwoSC75/SC89packagedlowVCEsattrans | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
15 V low VCEsat NPN double transistor | ETC 知名厂家 | ETC | | |
15 V low VCE(sat) NPN double transistor | ETC 知名厂家 | ETC | | |
15 V low VCEsat NPN double transistor 1.Generaldescription NPNlowVCEsatdoubletransistorinaSOT666ultrasmallandflatleadSurface-MountedDevice (SMD)plasticpackage. PNPcomplement:PBSS3515VS 2.Featuresandbenefits •300mWtotalpowerdissipation •Verysmall1.6x1.2mmultrathinpackage •Excellentcoplana | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
15 V low VCE(sat) NPN/PNP transistor | ETC 知名厂家 | ETC | | |
15 V low VCE(sat) NPN/PNP transistor | ETC 知名厂家 | ETC | | |
15 V low VCEsat NPN/PNP transistor 1.Generaldescription NPN/PNPlowVCEsattransistorpairinaSOT363(SC-88)verysmallSurface-MountedDevice (SMD)plasticpackage.. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •ReplacestwoSC-70packagedlowVCEsattransistorsonsam | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
15 V low VCEsat NPN/PNP transistor 1.Generaldescription NPN/PNPlowVCEsattransistorpairinaSOT363(SC-88)verysmallSurface-MountedDevice (SMD)plasticpackage.. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •ReplacestwoSC-70packagedlowVCEsattransistorsonsam | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 500 mA NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V low V NPN transistor | ETC 知名厂家 | ETC | | |
40 V, 0.5 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 0.5 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 0.5 A NPN low VCEsat (BISS) transistor 1.Generaldescription LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheat | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 0.5 A NPN low VCEsat (BISS) transistor Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS3540MB. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■Lowpackageheight | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 4 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
20 V, 4 A NPN low VCEsat (BISS) transistor 1.1Generaldescription NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT457(SC-74) Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS301PD. 1.2Features *Verylowcollector-emittersaturationresistance *Ultralowcollector-emittersaturationvoltag | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
12 V, 5.3 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
12 V, 5.8 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
12 V, 5.8 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 4 A PNP low VCEsat (BISS) transistor 1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS301ND. 1.2Features *Verylowcollector-emittersaturationresistance *Ultralowcollector-emittersaturationvoltag | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
12 V, 5.3 A PNP low VCEsat (BISS) transistor 1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89 (SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS301NX. 1.2Features ..Lowcollector-emittersaturationvoltageVCEsat ..Highcollectorcur | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
12 V, 5.7 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 4 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 4 A NPN low VCEsat (BISS) transistor 1.1Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.3 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.8 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
20 V, 5.8 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS302PZ 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcur | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.8 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcurrentgain(hFE)athighIC | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 4 A PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 4 A PNP low VCEsat (BISS) transistor 1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS302ND. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 4 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS302ND-Q 2.Featuresandbenefits •Ultralowcollector-emittersaturationvoltageVCEsat •4AcontinuouscollectorcurrentcapabilityIC •Upto15 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.1 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.5 A PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
20 V, 5.5 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.5 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS302NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 3 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 3 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS303PD-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.1 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
30 V, 5.1 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.5 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.5 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS303PZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 3 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.1 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.3 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.3 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS303NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
80 V, 3 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 4.7 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 5.2 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
60 V, 5.2 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 5.2 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS304PZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
80 V, 3 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 4.2 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 4.5 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
PBSS产品属性
- 类型
描述
- 型号
PBSS
- 制造商
PSM International
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NXP(恩智浦) |
24+ |
标准封装 |
8128 |
全新原装正品/价格优惠/质量保障 |
|||
NXP/恩智浦 |
24+ |
NA/ |
3600 |
原厂直销,现货供应,账期支持! |
|||
NXP |
2016+ |
SO3T23 |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NXP |
24+ |
SOT-523 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
NXP |
12+ |
NA |
48 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NXP |
24+ |
SOT523 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
NXP |
23+ |
SOT523 |
999999 |
原装正品现货量大可订货 |
|||
NXP(恩智浦) |
23+ |
NA |
6000 |
原装现货订货价格优势 |
|||
NXP |
1735+ |
SOT523 |
6528 |
科恒伟业!只做原装正品!假一赔十! |
|||
NXP |
2406+ |
SOT-323 |
6598 |
优势代理渠道,原装现货,可全系列订货 |
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