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PBSS价格
参考价格：￥0.5457
型号：PBSS2515E,115 品牌：NXP 备注：这里有PBSS多少钱，2025年最近7天走势，今日出价，今日竞价，PBSS批发/采购报价，PBSS行情走势销售排行榜，PBSS报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
15 V low VCEsat NPN double transistor DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High | Philips 飞利浦 |   | ||
15 V, 0.5 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
15 V, 0.5 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
15 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3515F. FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved thermal behaviour due to flat leads. APPLICATIONS • General purpose switching and muting • Low f | Philips 飞利浦 | | ||
15 V, 0.5 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
15 V, 0.5 A NPN low VCEsat (BISS) transistor FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to reduced heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management: –DC-DC converter –Supply line switching –Battery charg | NEXPERIA 安世 | | ||
15 V low VCE(sat) NPN/PNP transistor FEATURES •300 mW total power dissipation •Very small 1.6 × 1.2 mm ultra thin package •Excellent coplanarity due to straight leads •Low collector-emitter saturation voltage •High current capability •Improved thermal behaviour due to flat lead •Replaces two SC75/SC89 packaged low VCEsat trans | NEXPERIA 安世 | | ||
15 V low VCEsat NPN double transistor DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High | Philips 飞利浦 | | ||
15 V low VCE(sat) NPN double transistor | ETC 知名厂家 | ETC | | |
15 V low VCEsat NPN double transistor 1. General description NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515VS 2. Features and benefits • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplana | NEXPERIA 安世 | | ||
15 V low VCE(sat) NPN/PNP transistor DESCRIPTION NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APP | Philips 飞利浦 | | ||
15 V low VCE(sat) NPN/PNP transistor | ETC 知名厂家 | ETC | | |
15 V low VCEsat NPN/PNP transistor 1. General description NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on sam | NEXPERIA 安世 | | ||
15 V low VCEsat NPN/PNP transistor 1. General description NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on sam | NEXPERIA 安世 | | ||
40 V, 500 mA NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability: IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
40 V low V NPN transistor DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3540F. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors. | Philips 飞利浦 | | ||
40 V, 0.5 A NPN low VCEsat (BISS) transistor DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed | Philips 飞利浦 | | ||
40 V, 0.5 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 0.5 A NPN low VCEsat (BISS) transistor 1. General description Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat | NEXPERIA 安世 | | ||
40 V, 0.5 A NPN low VCEsat (BISS) transistor General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. Features and benefits ■ Leadless ultra small SMD plastic package ■ Low package height | NEXPERIA 安世 | | ||
20 V, 4 A NPN low VCEsat (BISS) transistor General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS301PD. Features ■ Very low collector-emitter saturation resistance ■ Ultra low collector-emitter saturation voltage ■ 4 A continuous collector curren | Philips 飞利浦 | | ||
20 V, 4 A NPN low VCEsat (BISS) transistor 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS301PD. 1.2 Features * Very low collector-emitter saturation resistance * Ultra low collector-emitter saturation voltag | NEXPERIA 安世 | | ||
12 V, 5.3 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
12 V, 5.8 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
12 V, 5.8 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
20 V, 4 A PNP low VCEsat (BISS) transistor 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301ND. 1.2 Features * Very low collector-emitter saturation resistance * Ultra low collector-emitter saturation voltag | NEXPERIA 安世 | | ||
12 V, 5.3 A PNP low VCEsat (BISS) transistor 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS301NX. 1.2 Features .. Low collector-emitter saturation voltage VCEsat .. High collector cur | NEXPERIA 安世 | | ||
12 V, 5.7 A PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
40 V, 4 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 4 A NPN low VCEsat (BISS) transistor 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PD. 1.2 Features * Ultra low collector-emitter saturation voltage VCEsat * 4 A continuous collector current c | NEXPERIA 安世 | | ||
20 V, 5.3 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
20 V, 5.8 A NPN low VCEsat (BISS) transistor General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hig | Philips 飞利浦 | | ||
20 V, 5.8 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS302PZ 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector cur | NEXPERIA 安世 | | ||
20 V, 5.8 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC | NEXPERIA 安世 | | ||
40 V PNP low VCEsat (BISS) transistor General description PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS302ND Features ■ Ultra low collector-emitter saturation voltage VCEsat ■ 4 A continuous collector current capability IC (DC) ■ Up | Philips 飞利浦 | | ||
40 V, 4 A PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 4 A PNP low VCEsat (BISS) transistor 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND. 1.2 Features * Ultra low collector-emitter saturation voltage VCEsat * 4 A continuous collector current c | NEXPERIA 安世 | | ||
40 V, 4 A PNP low VCEsat transistor 1. General description PNP low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302ND-Q 2. Features and benefits • Ultra low collector-emitter saturation voltage VCEsat • 4 A continuous collector current capability IC • Up to 15 | NEXPERIA 安世 | | ||
20 V, 5.1 A PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
20 V, 5.5 A PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
20 V, 5.5 A PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
20 V, 5.5 A PNP low VCEsat transistor 1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c | NEXPERIA 安世 | | ||
60 V, 3 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
60 V, 3 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PD-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c | NEXPERIA 安世 | | ||
30 V, 5.1 A NPN low VCEsat (BISS) transistor General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PX. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capabili | Philips 飞利浦 | | ||
30 V, 5.1 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
30 V, 5.5 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
30 V, 5.5 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS303PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c | NEXPERIA 安世 | | ||
60 V, 3 A PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
30 V, 5.1 A PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
30 V, 5.3 A PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
30 V, 5.3 A PNP low VCEsat transistor 1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS303NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c | NEXPERIA 安世 | | ||
80 V, 3 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
60 V, 4.7 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
NPN General Purpose Transistor Features » Consumer electronics « Voltage switching « High Speed Switching | TECHPUBLIC 台舟电子 | | ||
60 V, 5.2 A NPN low VCEsat (BISS) transistor General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PZ. Features ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability IC and ICM ■ Hig | Philips 飞利浦 | | ||
60 V, 5.2 A NPN low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | | ||
NPN General Purpose Transistor Features Consumer electronics o Voltage switching « High Speed Switching | TECHPUBLIC 台舟电子 | | ||
60 V, 5.2 A NPN low VCEsat transistor 1. General description NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c | NEXPERIA 安世 | | ||
80 V, 3 A PNP low VCEsat (BISS) transistor Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors | NEXPERIA 安世 | |
PBSS产品属性
- 类型
描述
- 型号
PBSS
- 制造商
PSM International
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
恩XP |
24+ |
标准封装 |
8128 |
全新原装正品/价格优惠/质量保障 |
|||
恩XP |
24+ |
NA/ |
3600 |
原厂直销,现货供应,账期支持! |
|||
恩XP |
2016+ |
SO3T23 |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
恩XP |
24+ |
SOT-523 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
恩XP |
25+ |
SOT-523 |
32360 |
NXP/恩智浦全新特价PBSS2515E即刻询购立享优惠#长期有货 |
|||
恩XP |
24+ |
SOT523 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
NEXPERIA/安世 |
24+ |
SOT523-3L |
900000 |
原装进口特价 |
|||
恩XP |
12+ |
NA |
48 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
恩XP |
2450+ |
SOT323 |
9850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
恩XP |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
PBSS规格书下载地址
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