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PBSS价格
参考价格：￥0.5457
型号：PBSS2515E,115 品牌：NXP 备注：这里有PBSS多少钱，2025年最近7天走势，今日出价，今日竞价，PBSS批发/采购报价，PBSS行情走势销售排行榜，PBSS报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
15 V low VCEsat NPN double transistor DESCRIPTION NPNlowVCEsatdoubletransistorinaSOT666plasticpackage. PNPcomplement:PBSS3515VS. FEATURES •300mWtotalpowerdissipation •Verysmall1.6x1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •High | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |   | |
15 V, 0.5 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
15 V, 0.5 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 |  | | |
15 V low VCEsat NPN transistor DESCRIPTION NPNlowVCEsattransistorinaSC-89(SOT490)plasticpackage. PNPcomplement:PBSS3515F. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapabilities •Improvedthermalbehaviourduetoflatleads. APPLICATIONS •Generalpurposeswitchingandmuting •Lowf | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
15 V, 0.5 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
15 V, 0.5 A NPN low VCEsat (BISS) transistor FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted-circuitboardrequirements. APPLICATIONS •Powermanagement: –DC-DCconverter –Supplylineswitching –Batterycharg | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
15 V low VCE(sat) NPN/PNP transistor FEATURES •300mWtotalpowerdissipation •Verysmall1.6×1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improvedthermalbehaviourduetoflatlead •ReplacestwoSC75/SC89packagedlowVCEsattrans | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
15 V low VCEsat NPN double transistor DESCRIPTION NPNlowVCEsatdoubletransistorinaSOT666plasticpackage. PNPcomplement:PBSS3515VS. FEATURES •300mWtotalpowerdissipation •Verysmall1.6x1.2mmultrathinpackage •Excellentcoplanarityduetostraightleads •Lowcollector-emittersaturationvoltage •High | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
15 V low VCE(sat) NPN double transistor | ETC 知名厂家 | ETC | | |
15 V low VCEsat NPN double transistor 1.Generaldescription NPNlowVCEsatdoubletransistorinaSOT666ultrasmallandflatleadSurface-MountedDevice (SMD)plasticpackage. PNPcomplement:PBSS3515VS 2.Featuresandbenefits •300mWtotalpowerdissipation •Verysmall1.6x1.2mmultrathinpackage •Excellentcoplana | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
15 V low VCE(sat) NPN/PNP transistor DESCRIPTION NPN/PNPlowVCEsattransistorpairinaSC-88plasticpackage. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •ReplacestwoSC-70packagedlowVCEsattransistorson samePCBarea •ReducesrequiredPCBarea •Reducedpickandplacecosts. APP | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
15 V low VCE(sat) NPN/PNP transistor | ETC 知名厂家 | ETC | | |
15 V low VCEsat NPN/PNP transistor 1.Generaldescription NPN/PNPlowVCEsattransistorpairinaSOT363(SC-88)verysmallSurface-MountedDevice (SMD)plasticpackage.. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •ReplacestwoSC-70packagedlowVCEsattransistorsonsam | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
15 V low VCEsat NPN/PNP transistor 1.Generaldescription NPN/PNPlowVCEsattransistorpairinaSOT363(SC-88)verysmallSurface-MountedDevice (SMD)plasticpackage.. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcurrentcapability •ReplacestwoSC-70packagedlowVCEsattransistorsonsam | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 500 mA NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *Highcollectorcurrentcapability:ICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V low V NPN transistor DESCRIPTION NPNlowVCEsattransistorinaSC-89(SOT490)plasticpackage. PNPcomplement:PBSS3540F. FEATURES •Lowcollector-emittersaturationvoltage •Highcurrentcapability •Improvedthermalbehaviourduetoflatleads •EnhancedperformanceoverSOT23generalpurposetransistors. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
40 V, 0.5 A NPN low VCEsat (BISS) transistor DESCRIPTION LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. FEATURES •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheatgeneration •Reducedprinted | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
40 V, 0.5 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 0.5 A NPN low VCEsat (BISS) transistor 1.Generaldescription LowVCEsatNPNtransistorinaSOT883leadlessultrasmallplasticpackage. PNPcomplement:PBSS3540M. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highefficiencyleadingtoreducedheat | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 0.5 A NPN low VCEsat (BISS) transistor Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadlessultrasmallDFN1006B-3(SOT883B)Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS3540MB. Featuresandbenefits ■LeadlessultrasmallSMDplastic package ■Lowpackageheight | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 4 A NPN low VCEsat (BISS) transistor Generaldescription NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT457(SC-74)SMDplasticpackage. PNPcomplement:PBSS301PD. Features ■Verylowcollector-emittersaturationresistance ■Ultralowcollector-emittersaturationvoltage ■4Acontinuouscollectorcurren | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
20 V, 4 A NPN low VCEsat (BISS) transistor 1.1Generaldescription NPNlowVCEsatBreakthroughinSmallSignal(BISS)transistorinaSOT457(SC-74) Surface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS301PD. 1.2Features *Verylowcollector-emittersaturationresistance *Ultralowcollector-emittersaturationvoltag | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
12 V, 5.3 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
12 V, 5.8 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
12 V, 5.8 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 4 A PNP low VCEsat (BISS) transistor 1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) Surface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS301ND. 1.2Features *Verylowcollector-emittersaturationresistance *Ultralowcollector-emittersaturationvoltag | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
12 V, 5.3 A PNP low VCEsat (BISS) transistor 1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89 (SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS301NX. 1.2Features ..Lowcollector-emittersaturationvoltageVCEsat ..Highcollectorcur | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
12 V, 5.7 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 4 A NPN low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 4 A NPN low VCEsat (BISS) transistor 1.1Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PD. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.3 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.8 A NPN low VCEsat (BISS) transistor Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS302PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
20 V, 5.8 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS302PZ 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcur | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.8 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorcurrentgain(hFE)athighIC | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V PNP low VCEsat (BISS) transistor Generaldescription PNPlowVCEsatBreakthroughinSmallSignal(BISS)singlebipolarPNPtransistorinaSOT457(SC-74)SMDplasticpackage. NPNcomplement:PBSS302ND Features ■Ultralowcollector-emittersaturationvoltageVCEsat ■4AcontinuouscollectorcurrentcapabilityIC(DC) ■Up | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
40 V, 4 A PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
40 V, 4 A PNP low VCEsat (BISS) transistor 1.1Generaldescription PNPlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT457(SC-74) smallSurface-MountedDevice(SMD)plasticpackage. NPNcomplement:PBSS302ND. 1.2Features *Ultralowcollector-emittersaturationvoltageVCEsat *4Acontinuouscollectorcurrentc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
40 V, 4 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS302ND-Q 2.Featuresandbenefits •Ultralowcollector-emittersaturationvoltageVCEsat •4AcontinuouscollectorcurrentcapabilityIC •Upto15 | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.1 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.5 A PNP low VCEsat (BISS) transistor | ETC 知名厂家 | ETC | | |
20 V, 5.5 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
20 V, 5.5 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS302NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 3 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 3 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT457(SC-74)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS303PD-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.1 A NPN low VCEsat (BISS) transistor Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT89(SC-62/TO-243)smallandflatleadSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS303PX. Features ■Lowcollector-emittersaturationvoltageVCEsat ■Highcollectorcurrentcapabili | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
30 V, 5.1 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.5 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.5 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS303PZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 3 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.1 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.3 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
30 V, 5.3 A PNP low VCEsat transistor 1.Generaldescription PNPlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. NPNcomplement:PBSS303NZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
80 V, 3 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 4.7 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 5.2 A NPN low VCEsat (BISS) transistor Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBSS304PZ. Features ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityICandICM ■Hig | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | | |
60 V, 5.2 A NPN low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 5.2 A NPN low VCEsat transistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223(SC-73)smallSurface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS304PZ-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highcollectorc | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
80 V, 3 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 4.2 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | | |
60 V, 4.5 A PNP low VCEsat (BISS) transistor Features *Lowcollector-emittersaturationvoltageVCEsat *HighcollectorcurrentcapabilityICandICM *Highcollectorcurrentgain(hFE)athighIC *Highefficiencyduetolessheatgeneration *SmallerrequiredPrinted-CircuitBoard(PCB)areathanforconventionaltransistors | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | | |
PBSS产品属性
- 类型
描述
- 型号
PBSS
- 制造商
PSM International
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
SOT-1061 |
3022 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
恩XP |
24+ |
NA/ |
200 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEXPERIA/安世 |
24+ |
原厂原封可拆样 |
65258 |
百分百原装现货,实单必成 |
|||
恩XP |
23+ |
QFN64 |
12700 |
买原装认准中赛美 |
|||
恩XP |
24+ |
SOT-1118D |
30000 |
原装正品公司现货,假一赔十! |
|||
恩XP |
21+ |
SOT-1118D |
8080 |
只做原装,质量保证 |
|||
Nexperia/安世 |
22+ |
SOT1061 |
60000 |
原厂原装正品现货 |
|||
恩XP |
24+ |
SOT-1118D |
10000 |
十年沉淀唯有原装 |
|||
Nexperia(安世) |
2447 |
SOT-1061 |
115000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
恩XP |
22+ |
SOT1061 |
20000 |
原装现货,实单支持 |
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- PBSM5240PF,115
- PBS-H
- PBSC8
- PBSC6-X
- PBSC6
- PBSC3-X
- PBSC3
- PBSC1-X
- PBSC12-X
- PBSC12
- PBSC1
- PBS9MZRES
- PBS9MTRES
- PBS8MZRES
- PBS8MTRES
- PBS82
- PBS62
- PBS42
- PBS40C
- PBS30A
- PBS22
- PBS12600CB
- PBS-11532-G
- PBS-11532-B
- PBS-11327-G
- PBS-11327-B
- PBS-11273
- PBS10A
- PBRV-H
- PBRV8.00MR50Y000
- PBRV8.00HR50Y000
- PBRV7.37MR50Y000
- PBRV7.37MR50X000
- PBRC-L
- PBRC-G
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