丝印代码：AF；80 V, 3 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

Low VCEsat (BISS) transistors

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80 V, 3 A NPN low VCEsat (BISS) transistor

封装/外壳：SC-74，SOT-457 包装：卷带（TR） 描述：TRANS NPN 80V 1A 6TSOP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

DPAK SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes)

VOLTAGE 200 to 600 Volts CURRENT 3.0 Amperes FEATURES • Superfast recovery times-epitaxial construction. • Low forward voltage, high current capability. • Exceeds environmental standards of MIL-S-19500/228. • Hermetically sealed. • Low leakage. • High surge capability. • Plastic package ha

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 3.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 3.0 Amperes)

VOLTAGE 50 to 1000 Volt CURRENT 3 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Glass passivated junction • Fast switching for high efficiency. • Lead free in compliance with EU RoHS

Negative Regulator

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Negative Regulator

文件：161.59 Kbytes Page：6 Pages