FEATURES

•300 mW total power dissipation

•Very small 1.6 × 1.2 mm ultra thin package

•Excellent coplanarity due to straight leads

•Low collector-emitter saturation voltage

•High current capability

•Improved thermal behaviour due to flat lead

•Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area

•Reduces required PCB area

•Reduced pick and place costs.

APPLICATION

•General purpose switching and muting

•Low frequency driver circuits

•LCD backlighting

•Audio frequency general purpose amplifier applications

•Battery driven equipment (mobile phones, video cameras and hand-held devices).

DESCRIPTION

NPN/PNP low VCEsat transistor pair in a SOT666 plastic package.