15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

15 V low VCEsat NPN double transistor

15 V, 0.5 A NPN low VCEsat (BISS) transistor

15 V, 0.5 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

15 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3515F. FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved thermal behaviour due to flat leads. APPLICATIONS • General purpose switching and muting • Low f

15 V, 0.5 A NPN low VCEsat (BISS) transistor

15 V, 0.5 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to reduced heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management: –DC-DC converter –Supply line switching –Battery charg

15 V low VCE(sat) NPN/PNP transistor

FEATURES •300 mW total power dissipation •Very small 1.6 × 1.2 mm ultra thin package •Excellent coplanarity due to straight leads •Low collector-emitter saturation voltage •High current capability •Improved thermal behaviour due to flat lead •Replaces two SC75/SC89 packaged low VCEsat trans

15 V low VCEsat NPN double transistor

1. General description NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515VS 2. Features and benefits • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplana

15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

15 V low VCE(sat) NPN double transistor

15 V low VCE(sat) NPN/PNP transistor

15 V low VCE(sat) NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APP

15 V low VCEsat NPN/PNP transistor

1. General description NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on sam

15 V low VCEsat NPN/PNP transistor

1. General description NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on sam

15 V, 0.5 A NPN low VCEsat (BISS) transistor

15 V low VCEsat NPN transistor

封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A SOT883 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

15 V, 0.5 A NPN low VCEsat (BISS) transistor

文件：1.14939 Mbytes Page：12 Pages

封装/外壳：3-XFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A DFN1006B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

15 V low VCE(sat) NPN/PNP transistor

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