15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

15 V low VCEsat NPN double transistor

丝印代码：PBSS2515MB；15 V, 0.5 A NPN low VCEsat (BISS) transistor

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丝印代码：1Q；15 V, 0.5 A NPN low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

15 V, 0.5 A NPN low VCEsat (BISS) transistor

15 V low VCEsat NPN transistor

DESCRIPTION NPN low VCEsat transistor in a SC-89 (SOT490) plastic package. PNP complement: PBSS3515F. FEATURES • Low collector-emitter saturation voltage • High current capabilities • Improved thermal behaviour due to flat leads. APPLICATIONS • General purpose switching and muting • Low f

15 V, 0.5 A NPN low VCEsat (BISS) transistor

丝印代码：S2；15 V, 0.5 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to reduced heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management: –DC-DC converter –Supply line switching –Battery charg

丝印代码：N8；15 V low VCE(sat) NPN/PNP transistor

FEATURES •300 mW total power dissipation •Very small 1.6 × 1.2 mm ultra thin package •Excellent coplanarity due to straight leads •Low collector-emitter saturation voltage •High current capability •Improved thermal behaviour due to flat lead •Replaces two SC75/SC89 packaged low VCEsat trans

丝印代码：N9；15 V low VCEsat NPN double transistor

1. General description NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515VS 2. Features and benefits • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplana

15 V low VCE(sat) NPN double transistor

15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

15 V low VCE(sat) NPN/PNP transistor

DESCRIPTION NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. FEATURES • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on same PCB area • Reduces required PCB area • Reduced pick and place costs. APP

15 V low VCE(sat) NPN/PNP transistor

丝印代码：N8；15 V low VCEsat NPN/PNP transistor

1. General description NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on sam

丝印代码：N8；15 V low VCEsat NPN/PNP transistor

1. General description NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Replaces two SC-70 packaged low VCEsat transistors on sam

15 V, 0.5 A NPN low VCEsat (BISS) transistor

15 V low VCEsat NPN transistor

封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A SOT883 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：3-XFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A DFN1006B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

15 V low VCE(sat) NPN/PNP transistor

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power sup

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters