20 V, 5.5 A PNP low VCEsat (BISS) transistor

20 V, 5.5 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

20 V, 5.5 A PNP low VCEsat (BISS) transistor

20 V, 5.5 A PNP low VCEsat transistor

1. General description PNP low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NZ-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector c

封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 20V 5.5A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

20 V, 5.5 A PNP low VCEsat transistor

Socket terminal strip Screw connection

The socket terminal strip 302 is one of our smallest socket terminal strips. It is available in 8 mm pitch with 1- to 12-pole design and can be easily cut to the desired number of poles. The flexible polyamide moulding can even be mounted on curved surfaces. The wire protector of the “HDS”-ver

2 (50.8 mm) Single Turn Wirewound Precision Potentiometer

FEATURES • Screw, servo and bushing mount types available • Large range of ohmic values: 5  to 85 k • Extra taps upon request • Gangable up to 6 sections on a same shaft • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

Indicates Phase Presence

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Extra taps upon request

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SCREW TYPE SERIES

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