15 V, 0.5 A NPN low VCEsat (BISS) transistor

丝印代码：S2；15 V, 0.5 A NPN low VCEsat (BISS) transistor

FEATURES •Low collector-emitter saturation voltage VCEsat •High collector current capability IC and ICM •High efficiency leading to reduced heat generation •Reduced printed-circuit board requirements. APPLICATIONS •Power management: –DC-DC converter –Supply line switching –Battery charg

15 V, 0.5 A NPN low VCEsat (BISS) transistor

Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3515M. • Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency leading to reduced heat generation\n• Reduced printed-circuit board requirements.\n• AEC-Q101 qualified;

15 V, 0.5 A NPN low VCEsat (BISS) transistor

丝印代码：PBSS2515MB；15 V, 0.5 A NPN low VCEsat (BISS) transistor

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15 V, 0.5 A NPN low VCEsat (BISS) transistor

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.\n PNP complement: PBSS3515MB. • Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High efficiency due to less heat generation\n• AEC-Q101 qualified\n• Reduced Printed-Circuit Board (PCB) requirements;

封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A SOT883 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：3-XFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 15V 0.5A DFN1006B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power sup

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters