40 V, 0.5 A NPN low VCEsat (BISS) transistor

DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed

40 V, 0.5 A NPN low VCEsat (BISS) transistor

40 V, 0.5 A NPN low VCEsat (BISS) transistor

1. General description Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat

40 V, 0.5 A NPN low VCEsat (BISS) transistor

40 V, 0.5 A NPN low VCEsat (BISS) transistor

General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. Features and benefits ■ Leadless ultra small SMD plastic package ■ Low package height

封装/外壳：SC-101，SOT-883 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.5A SOT883 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

40 V, 0.5 A NPN low VCEsat (BISS) transistor

封装/外壳：3-XFDFN 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 40V 0.5A DFN1006B-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Dry Lining Box

Features: • Two gang surface pattress box

QUAD DARLINGTON POWER DRIVER

Combining AND logic gates and inverting high-current bipolar outputs, the UDN2540B and A2540SLB quad Darlington power drivers provide interface between low-level signal-processing circuits and power loads totaling 360 W. Each of the four independent outputs can sink up to 1.8 A in the on state wit

Threaded Smooth Bore Bushings

文件：154.07 Kbytes Page：1 Pages

60 MHz (2540B/2540B-GEN) and 100 MHz (2542B/2542B-GEN) bandwidth

文件：367.62 Kbytes Page：6 Pages

60 MHz (2540B/2540B-GEN) and 100 MHz (2542B/2542B-GEN) bandwidth

文件：367.62 Kbytes Page：6 Pages