15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

15 V low VCE(sat) NPN double transistor

丝印代码：N9；15 V low VCEsat NPN double transistor

1. General description NPN low VCEsat double transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515VS 2. Features and benefits • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplana

15 V low VCEsat NPN double transistor

NPN low VCEsat double transistor in a SOT666 plastic package.\n PNP complement: PBSS3515VS. • 300 mW total power dissipation\n• Very small 1.6 x 1.2 mm ultra thin package\n• Excellent coplanarity due to straight leads\n• Low collector-emitter saturation voltage\n• High current capability\n• Improved thermal behaviour due to flat lead\n• Replaces two SC-75/SC-89 packaged low VCEsat transist;

15 V low VCE(sat) NPN double transistor

15 V low VCEsat NPN double transistor

DESCRIPTION NPN low VCEsat double transistor in a SOT666 plastic package. PNP complement: PBSS3515VS. FEATURES • 300 mW total power dissipation • Very small 1.6 x 1.2 mm ultra thin package • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage • High

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of pc monitors.

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier . . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power sup

SWITCHMODE??Power Rectifier D2PAK Surface Mount Power Package

The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free

Silicon Complementary Transistors High Current Switch

Features: Low Collector Emitter Saturation Voltage High Gain–Bandwidth Product Excellent Linearity of hFE Fast Switching Time Applications: Display Drivers High Speed Inverters Converters