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NP10价格

参考价格：￥25.4448

型号：NP10 品牌：PRO 备注：这里有NP10多少钱，2025年最近7天走势，今日出价，今日竞价，NP10批发/采购报价，NP10行情走势销售排行榜，NP10报价。

型号	功能描述	生产厂家企业	LOGO
NP100N04MDH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N04MUH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N04NDH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N04NUH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N04NUJ	MOS FIELD EFFECT TRANSISTOR Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) • High current rating: ID	RENESAS 瑞萨	RENESAS
NP100N04NUJ	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N04NUJ.S18-AY	MOS FIELD EFFECT TRANSISTOR Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) • High current rating: ID	RENESAS 瑞萨	RENESAS
NP100N04PDH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N04PUH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.1mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N04PUK	MOS FIELD EFFECT TRANSISTOR Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A ) • Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat	RENESAS 瑞萨	RENESAS
NP100N04PUK	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP100N04PUK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N04PUK_V01	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP100N04PUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A ) • Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat	RENESAS 瑞萨	RENESAS
NP100N04PUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP100N04PUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A ) • Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat	RENESAS 瑞萨	RENESAS
NP100N04PUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP100N055MDH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N055MUH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N055NDH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N055NUH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N055PDH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N055PUH	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N055PUK	MOS FIELD EFFECT TRANSISTOR Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) • Designed for automotive applicatio	RENESAS 瑞萨	RENESAS
NP100N055PUK	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP100N055PUK	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP100N055PUK_V01	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP100N055PUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) • Designed for automotive applicatio	RENESAS 瑞萨	RENESAS
NP100N055PUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP100N055PUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) • Designed for automotive applicatio	RENESAS 瑞萨	RENESAS
NP100N055PUK-E2-AY	MOS FIELD EFFECT TRANSISTOR Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified	RENESAS 瑞萨	RENESAS
NP100P04PDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID	NEC 瑞萨	NEC
NP100P04PDG-E1-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID	NEC 瑞萨	NEC
NP100P04PDG-E2-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID	NEC 瑞萨	NEC
NP100P04PLG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D	NEC 瑞萨	NEC
NP100P04PLG-E1-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D	NEC 瑞萨	NEC
NP100P04PLG-E2-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D	NEC 瑞萨	NEC
NP100P06PDG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(	NEC 瑞萨	NEC
NP100P06PDG	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss =	RENESAS 瑞萨	RENESAS
NP100P06PDG-E1-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(	NEC 瑞萨	NEC
NP100P06PDG-E1-AY	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss =	RENESAS 瑞萨	RENESAS
NP100P06PDG-E2-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(	NEC 瑞萨	NEC
NP100P06PLG	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID	NEC 瑞萨	NEC
NP100P06PLG	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss =	RENESAS 瑞萨	RENESAS
NP100P06PLG-E1-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID	NEC 瑞萨	NEC
NP100P06PLG-E1-AY	-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss =	RENESAS 瑞萨	RENESAS
NP100P06PLG-E2-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID	NEC 瑞萨	NEC
NP109N04PUG	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • High current rating ID(DC) = ±110 A	NEC 瑞萨	NEC
NP109N04PUG	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP109N04PUG-E1-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • High current rating ID(DC) = ±110 A	NEC 瑞萨	NEC
NP109N04PUG-E2-AY	MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • High current rating ID(DC) = ±110 A	NEC 瑞萨	NEC
NP109N04PUJ	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 6900 pF TYP. • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP109N04PUJ	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.	ISC 无锡固电	ISC
NP109N04PUJ-E1B-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 6900 pF TYP. • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP109N04PUJ-E2B-AY	MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 6900 pF TYP. • Designed for automotive applicati	RENESAS 瑞萨	RENESAS
NP109N04PUK	MOS FIELD EFFECT TRANSISTOR Description NP109N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.75 m MAX. ( VGS = 10 V, ID = 55 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP109N04PUK	MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V) • Designed for automotive application	RENESAS 瑞萨	RENESAS
NP109N04PUK_V01	MOS FIELD EFFECT TRANSISTOR Description NP109N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.75 m MAX. ( VGS = 10 V, ID = 55 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP109N04PUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description NP109N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 1.75 m MAX. ( VGS = 10 V, ID = 55 A ) ･ Low Ciss Ciss = 7200 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and	RENESAS 瑞萨	RENESAS
NP109N04PUK-E1-AY	MOS FIELD EFFECT TRANSISTOR Description The NP109N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.75 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 7200 pF TYP. (VDS = 25 V) • Designed for automotive application	RENESAS 瑞萨	RENESAS

NP10产品属性

类型
描述
型号
NP10
制造商
Farnell/Pro-Power
功能描述
CABLE CLEAT PK25
制造商
pro-power
功能描述
CABLE CLEAT, PK25
制造商
pro-power
功能描述
CABLE CLEAT, PK25; Clip
Style
Round; External
Length
31.8mm;
Height
45.7mm; External
Width
19mm; Clip
Colour
Black; Accessory
Type
Cable Clip; Cable Diameter
Max
25.8mm; Cable Diameter
Min
19.7mm;
Colour
Black; External Length/;RoHS
Compliant
NA

NP10供应商更多...

更新时间：2025-11-26 20:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市金芯世纪电子有限公司	NP100N04PUK	RENESAS/瑞萨	22+	TO-263	100000	代理渠道/只做原装/可含税	询价
深圳市芯皇电子有限公司	NP100N04NUJ	RENESAS/瑞萨	22+	TO-262	9000	专业配单,原装正品假一罚十,代理渠道价格优	询价
深圳市威尔健半导体有限公司	NP100N04MDH-S18	NCE/新洁能	23+	TO-220	69820	终端可以免费供样,支持BOM配单!	询价
深圳市星辰微电科技有限公司	NP100N04NUJ	RENESAS/瑞萨	22+	TO-262	12500	瑞萨全系列在售,终端可出样品	询价
深圳市宏捷佳电子科技有限公司	NP100N04MDH-S18	R	25+	T0-TO-220	37650	独立分销商公司只做原装诚心经营免费试样正品保证	询价
深圳市晨豪科技有限公司	NP100N04NUJ	RENESAS/瑞萨	23+	TO-262	89630	当天发货全新原装现货	询价
深圳市河锋鑫科技有限公司	NP100N04MDH-S18	NEC	22+	TO-220	6000	十年配单,只做原装	询价
贸泽芯城（深圳）电子科技有限公司	NP100N04MDH-S18	NEC	23+	TO-220	32687	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
京海半导体(深圳)有限公司	NP100N04MDH-S18	VB	21+	T0-220	10000	原装现货假一罚十	询价
深圳市高捷芯城科技有限公司	NP100N04PUK(1)-E1-AY	RENESAS(瑞萨)/IDT	24+		7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价

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公司原装现货
2022-4-14
NP16N06QLK-E1-AY 瑞智芯只有原装
深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号： NP16N06QLK-E1-AY 类别分立半导体产品晶体管 - FET，MOSFET - 阵列制造商 Renesas Electronics America Inc 封装：8-PowerL
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NP90N04NUK-S18-AY 瑞智芯只有原装
深圳市瑞智芯科技有限公司联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：NP90N04NUK-S18-AY 类别分立半导体产品晶体管 - FET，MOSFET - 单个制造商 Renesas Electronics America Inc 包装：50 封装
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NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商
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NP10芯片相关品牌

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NOVATEK

NP16N06QLK-E1-AY 瑞智芯 只有原装

NP90N04NUK-S18-AY 瑞智芯 只有原装

NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商

NOSC107M006R0150 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商

NPA1006假一罚十

DdatasheetPDF页码索引

NP16N06QLK-E1-AY 瑞智芯只有原装

NP90N04NUK-S18-AY 瑞智芯只有原装

NOSE687M002R0060 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商

NOSC107M006R0150 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商