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位置：首页 > IC中文资料第30页 > NP10

NP10价格

参考价格：￥25.4448

型号：NP10 品牌：PRO 备注：这里有NP10多少钱，2024年最近7天走势，今日出价，今日竞价，NP10批发/采购报价，NP10行情走势销售排行榜，NP10报价。
型号 功能描述 生产厂家&企业 LOGO 操作
NP100N04MDH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04MUH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04NDH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04NUH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04NUJ

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N04NUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance ⎯RDS(on)=3.0mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=5600pFTYP.(VDS=25V,VGS=0V) •Highcurrentrating:ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04NUJ

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.0mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04NUJ.S18-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N04NUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance ⎯RDS(on)=3.0mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=5600pFTYP.(VDS=25V,VGS=0V) •Highcurrentrating:ID

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PDH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04PUH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4700pFTYP.(VDS=25V) •Designedforautomotiveapplicat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP100N04PUK_V01

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4700pFTYP.(VDS=25V) •Designedforautomotiveapplicat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4700pFTYP.(VDS=25V) •Designedforautomotiveapplicat

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=2.3mMAX.(VGS=10V,ID=50A) ･LowCissCiss=4700pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4900pFTYP.(VDS=25V) •Designedforautomotiveapplicatio

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK

MOS FIELD EFFECT TRANSISTOR

Features Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) LowCiss:Ciss=4900pFTYP.(VDS=25V) DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK_V01

MOS FIELD EFFECT TRANSISTOR

Features Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) LowCiss:Ciss=4900pFTYP.(VDS=25V) DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4900pFTYP.(VDS=25V) •Designedforautomotiveapplicatio

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Features Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) LowCiss:Ciss=4900pFTYP.(VDS=25V) DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP100N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) •LowCiss:Ciss=4900pFTYP.(VDS=25V) •Designedforautomotiveapplicatio

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100N055PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Features Superlowon-stateresistance RDS(on)=3.25mMAX.(VGS=10V,ID=50A) LowCiss:Ciss=4900pFTYP.(VDS=25V) DesignedforautomotiveapplicationandAEC-Q101qualified

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100P04PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P04PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P04PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.5mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P04PLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P04PLG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P04PLG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P04PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=3.7mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=5.1mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(D

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PDG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PDG

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100P06PDG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PDG-E1-AY

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100P06PDG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID(

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PLG

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100P06PLG-E1-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP100P06PLG-E1-AY

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss=

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP100P06PLG-E2-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP109N04PUG

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP109N04PUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •HighcurrentratingID(DC)=±110A

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP109N04PUG-E1-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP109N04PUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •HighcurrentratingID(DC)=±110A

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP109N04PUG-E2-AY

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION TheNP109N04PUGisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •HighcurrentratingID(DC)=±110A

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NP109N04PUJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP109N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=6900pFTYP. •Designedforautomotiveapplicati

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUJ-E1B-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP109N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=6900pFTYP. •Designedforautomotiveapplicati

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUJ-E2B-AY

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION TheNP109N04PUJisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)=2.3mΩMAX.(VGS=10V,ID=55A) •Lowinputcapacitance Ciss=6900pFTYP. •Designedforautomotiveapplicati

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK

MOS FIELD EFFECT TRANSISTOR

Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) ･LowCissCiss=7200pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) •LowCiss:Ciss=7200pFTYP.(VDS=25V) •Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK_V01

MOS FIELD EFFECT TRANSISTOR

Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) ･LowCissCiss=7200pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) ･LowCissCiss=7200pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) •LowCiss:Ciss=7200pFTYP.(VDS=25V) •Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N04PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=1.75mΩMAX.(VGS=10V,ID=55A) •LowCiss:Ciss=7200pFTYP.(VDS=25V) •Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N04PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description NP109N04TUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ･Superlowon-stateresistance RDS(on)=1.75mMAX.(VGS=10V,ID=55A) ･LowCissCiss=7200pFTYP.(VDS=25V) ･Designedforautomotiveapplicationand

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.2mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=7500pFTYP.(VDS=25V) ●Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=2.2mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=7500pFTYP.(VDS=25V) Designedforautomotiveapplicationan

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
NP109N055PUK_V01

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=2.2mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=7500pFTYP.(VDS=25V) Designedforautomotiveapplicationan

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=2.2mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=7500pFTYP.(VDS=25V) Designedforautomotiveapplicationan

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK-E1-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features ●Superlowon-stateresistance RDS(on)=2.2mΩMAX.(VGS=10V,ID=55A) ●LowCiss:Ciss=7500pFTYP.(VDS=25V) ●Designedforautomotiveapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NP109N055PUK-E2-AY

MOS FIELD EFFECT TRANSISTOR

Description TheNP109N055PUKisN-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance RDS(on)=2.2mMAX.(VGS=10V,ID=55A) LowCiss:Ciss=7500pFTYP.(VDS=25V) Designedforautomotiveapplicationan

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NP10产品属性

  • 类型

    描述

  • 型号

    NP10

  • 制造商

    Farnell/Pro-Power

  • 功能描述

    CABLE CLEAT PK25

  • 制造商

    pro-power

  • 功能描述

    CABLE CLEAT, PK25

  • 制造商

    pro-power

  • 功能描述

    CABLE CLEAT, PK25; Clip

  • Style

    Round; External

  • Length

    31.8mm;

  • Height

    45.7mm; External

  • Width

    19mm; Clip

  • Colour

    Black; Accessory

  • Type

    Cable Clip; Cable Diameter

  • Max

    25.8mm; Cable Diameter

  • Min

    19.7mm;

  • Colour

    Black; External Length/;RoHS

  • Compliant

    NA

NP10供应商更多...

更新时间：2024-6-4 15:17:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市惊羽科技有限公司
NP100N04MDH
NEC-日本电气
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
深圳市创新迹电子有限公司
NP100N04MDH-S18
NEC
22+
TO-220
25000
只做原装进口现货,专注配单
询价
深圳市汇莱威科技有限公司
NP100N04MDH-S18
VB
T0-220
68900
原包原标签100%进口原装常备现货!
询价
深圳市星辰微电科技有限公司
NP100N04NUJ
RENESAS/瑞萨
22+
TO-262
12500
瑞萨全系列在售,终端可出样品
询价
深圳市宏捷佳电子科技有限公司
NP100N04MDH-S18
R
23+
T0-TO-220
37650
全新原装真实库存含13点增值税票!
询价
深圳市国宇半导体科技有限公司
NP100N04MDH-S18
R
23+
T0-220
10000
公司只做原装正品
询价
易创佳业科技（深圳）有限公司
NP100N04MDH-S18
NEC
23+
TO-220
6000
原装正品，支持实单
询价
无锡固电半导体股份有限公司
NP100N04MDH
isc
2024
TO-220
175
国产品牌isc,可替代原装
询价
深圳市晨豪科技有限公司
NP100N04NUJ
RENESAS/瑞萨
23+
TO-262
89630
当天发货全新原装现货
询价
深圳市九方航科技有限公司
NP100N04MDH-S18
VBSEMI
19+
T0-220
29600
绝对原装现货,价格优势!
询价

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  • TAIYO-YUDEN
  • WEITRON

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NP10数据表相关新闻

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