MOS FIELD EFFECT TRANSISTOR

Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A ) • Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

Nch Single Power MOSFET 40V 100A 2.3mohm MP-25ZP/TO-263 Automotive

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and

MOS FIELD EFFECT TRANSISTOR

Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A ) • Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and

MOS FIELD EFFECT TRANSISTOR

Description NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features ･ Super low on-state resistance RDS(on) = 2.3 m MAX. ( VGS = 10 V, ID = 50 A ) ･ Low Ciss Ciss = 4700 pF TYP. ( VDS = 25 V ) ･ Designed for automotive application and

MOS FIELD EFFECT TRANSISTOR

Description The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V, ID = 50 A ) • Low Ciss: Ciss = 4700 pF TYP. ( VDS = 25 V ) • Designed for automotive applicat

MOS FIELD EFFECT TRANSISTOR

文件：231.81 Kbytes Page：8 Pages

MOSFET

Features - Super low gate charge. - AEC-Q101 Qualified. - Advanced high cell density technology. - Excellent Cdv/ dt effect decline. - 100% EAS guaranteed.

N-Channel 40-V (D-S) MOSFET

文件：1.64466 Mbytes Page：7 Pages

N-Channel 40-V (D-S) MOSFET

文件：1.64464 Mbytes Page：7 Pages

N-Channel 40-V (D-S) MOSFET

文件：1.64466 Mbytes Page：7 Pages

N-Channel 4 -V (D-S) MOSFET

文件：970.84 Kbytes Page：7 Pages