型号 功能描述 生产厂家 企业 LOGO 操作
NP100P06PLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID

NEC

瑞萨

NP100P06PLG

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss =

RENESAS

瑞萨

NP100P06PLG

Power MOSFETs for Automotive

RENESAS

瑞萨

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss =

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID

NEC

瑞萨

SWITCHING P-CHANNEL POWER MOS FET

文件:299.08 Kbytes Page:9 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET

文件:299.08 Kbytes Page:9 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET

文件:299.08 Kbytes Page:9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(

NEC

瑞萨

-60V – -100A – P-channel Power MOS FET Application : Automotive

Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A )  Low input capacitance : Ciss =

RENESAS

瑞萨

丝印代码:GT100P06;P-Channel Enhancement Mode Power MOSFET

Description The GT100P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

NP100P06PLG产品属性

  • 类型

    描述

  • 型号

    NP100P06PLG

  • 功能描述

    MOSFET P-CH -60V MP-25ZP/TO-263

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    -

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-15 11:06:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
24+
N/A
78000
一级代理-主营优势-实惠价格-不悔选择
RENESAS/瑞萨
23+
TO263
50000
全新原装正品现货,支持订货
Renesas(瑞萨)
23+
原厂封装
32078
10年以上分销商,原装进口件,服务型企业
Renesas
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
Renesas(瑞萨)
24+
标准封装
9633
支持大陆交货,美金交易。原装现货库存。
NK/南科功率
2025+
TO-263
986966
国产
Renesas
21+
-
1220
只做原装鄙视假货15118075546
RENESAS/瑞萨
22+
TO-263
20000
公司只做原装 品质保障
NEC
26+
原厂原封装
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
Renesas(瑞萨)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞

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