型号 功能描述 生产厂家&企业 LOGO 操作
NP109N04PUJ

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 6900 pF TYP. • Designed for automotive applicati

RENESAS

瑞萨

NP109N04PUJ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

NP109N04PUJ

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 6900 pF TYP. • Designed for automotive applicati

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 6900 pF TYP. • Designed for automotive applicati

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:318.16 Kbytes Page:10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET

文件:318.16 Kbytes Page:10 Pages

RENESAS

瑞萨

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANSISTOR 分立半导体产品 晶体管 - FET,MOSFET - 单个

ETC

知名厂家

SWITCHING N-CHANNEL POWER MOS FET

文件:318.16 Kbytes Page:10 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • High current rating ID(DC) = ±110 A

NEC

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 110A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

NP109N04PUJ产品属性

  • 类型

    描述

  • 型号

    NP109N04PUJ

  • 制造商

    RENESAS

  • 制造商全称

    Renesas Technology Corp

  • 功能描述

    MOS FIELD EFFECT TRANSISTOR

更新时间:2025-8-18 9:13:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
R
25+
TO263
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
RENESAS/瑞萨
22+
TO-263
12500
瑞萨全系列在售,终端可出样品
恩XP
23+
TO-252
69820
终端可以免费供样,支持BOM配单!
RENESA
23+
TO263
50000
全新原装正品现货,支持订货
Renesas
21+
TO-263
800
全新原装鄙视假货
RENESAS/瑞萨
23+
TO-263
89630
当天发货全新原装现货
RENESAS/瑞萨
22+
TO-263
100000
代理渠道/只做原装/可含税
RENESAS/瑞萨
2022+
TO-263
30000
进口原装现货供应,原装 假一罚十
RENESA
15+
TO263
371
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
2022+
TO-263
50000
原厂代理 终端免费提供样品

NP109N04PUJ数据表相关新闻