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NP100P06PDG价格
参考价格：￥19.2317
型号：NP100P06PDG-E1-AY 品牌：Renesas 备注：这里有NP100P06PDG多少钱，2024年最近7天走势，今日出价，今日竞价，NP100P06PDG批发/采购报价，NP100P06PDG行情走势销售排行榜，NP100P06PDG报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NP100P06PDG | MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NP100P06PDG | -60V–-100A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
-60V–-100A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PDGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID( | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGP-CHANNELPOWERMOSFET 文件：300.42 Kbytes Page：9 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGP-CHANNELPOWERMOSFET 文件：300.42 Kbytes Page：9 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SWITCHINGP-CHANNELPOWERMOSFET 文件：300.42 Kbytes Page：9 Pages | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
-60V–-100A–P-channelPowerMOSFETApplication:Automotive Description ThisproductisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. Features Superlowon-stateresistance:RDS(on)=6.0mMax.(VGS=-10V,ID=-50A) RDS(on)=7.8mMax.(VGS=-4.5V,ID=-50A) Lowinputcapacitance:Ciss= | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOSFIELDEFFECTTRANSISTOR DESCRIPTION TheNP100P06PLGisP-channelMOSFieldEffectTransistordesignedforhighcurrentswitchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.0mΩMAX.(VGS=−10V,ID=−50A) RDS(on)2=7.8mΩMAX.(VGS=−4.5V,ID=−50A) •Highcurrentrating:ID | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NP100P06PDG产品属性
- 类型
描述
- 型号
NP100P06PDG
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
23+ |
标准封装 |
8048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Renesas |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
NEC |
2021+ |
TO-252 |
1680 |
||||
Renesas(瑞萨) |
23+ |
N/A |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
|||
NEC |
TO-263 |
503159 |
16余年资质 绝对原盒原盘 更多数量 |
||||
NEC-日本电气 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
NEC |
21+ |
TO263 |
12588 |
原装正品,自己库存 假一罚十 |
|||
08+(pbfree) |
8866 |
||||||
Renesas |
23+ |
MP-25ZPTO-263 |
35400 |
全新原装真实库存含13点增值税票! |
|||
NEC |
23+ |
TO-252 |
5000 |
现货热卖 |
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