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NP100P06PDG价格
参考价格：￥19.2317
型号：NP100P06PDG-E1-AY 品牌：Renesas 备注：这里有NP100P06PDG多少钱，2026年最近7天走势，今日出价，今日竞价，NP100P06PDG批发/采购报价，NP100P06PDG行情走势销售排行榜，NP100P06PDG报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP100P06PDG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID( | NEC 瑞萨 |   | |
NP100P06PDG | -60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) Low input capacitance : Ciss = | RENESAS 瑞萨 | | |
NP100P06PDG | Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) Low input capacitance : Ciss = | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID( | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID( | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：300.42 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：300.42 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：300.42 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
-60V – -100A – P-channel Power MOS FET Application : Automotive Description This product is P-channel MOS Field Effect Transistor designed for high current switching applications. Features Super low on-state resistance : RDS(on) = 6.0 m Max. ( VGS = -10 V, ID = -50 A ) RDS(on) = 7.8 m Max. ( VGS = -4.5 V, ID = -50 A ) Low input capacitance : Ciss = | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 6.0 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 7.8 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID | NEC 瑞萨 | | ||
丝印代码：GT100P06；P-Channel Enhancement Mode Power MOSFET Description The GT100P06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | |
NP100P06PDG产品属性
- 类型
描述
- 型号
NP100P06PDG
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
RENESAS/瑞萨 |
24+ |
TO263 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
NEC |
2021+ |
TO-252 |
1680 |
||||
Renesas(瑞萨) |
24+ |
32000 |
全新原厂原装正品现货,低价出售,实单可谈 |
||||
Renesas(瑞萨) |
23+ |
原厂封装 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
|||
Renesas |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
RENESAS/瑞萨 |
24+ |
37279 |
郑重承诺只做原装进口现货 |
||||
NEC |
26+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
RENESAS |
2511 |
TO-263 |
3660 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
24+ |
8866 |
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