MOS FIELD EFFECT TRANSISTOR

Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) • Designed for automotive applicatio

MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.25mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Nch Single Power MOSFET 55V 100A 3.25mohm MP-25ZP/TO-263 Automotive

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

MOS FIELD EFFECT TRANSISTOR

Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) • Designed for automotive applicatio

MOS FIELD EFFECT TRANSISTOR

Description The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V) • Designed for automotive applicatio

MOS FIELD EFFECT TRANSISTOR

Features  Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = 10 V, ID = 50 A)  Low Ciss: Ciss = 4900 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified

MOS FIELD EFFECT TRANSISTOR

文件：121.71 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.9mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages

Electrically Isolated Back Surface

Trench Power MOSFET ISOPLUS220™ Electrically Isolated Back Surface Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Trench MOSFET - very low RDS(on) - fast switching - usable intr