MOS FIELD EFFECT TRANSISTOR

Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) • High current rating: ID

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Product Scout Automotive

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Power MOSFETs-Power MOSFETs for Automotive

MOS FIELD EFFECT TRANSISTOR

Description The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low Ciss: Ciss = 5600 pF TYP. (VDS = 25 V, VGS = 0 V) • High current rating: ID

MOS FIELD EFFECT TRANSISTOR

文件：223.75 Kbytes Page：8 Pages

MOSFET

Features - Super low gate charge. - AEC-Q101 Qualified. - Advanced high cell density technology. - Excellent Cdv/ dt effect decline. - 100% EAS guaranteed.

N-Channel 40-V (D-S) MOSFET

文件：1.64466 Mbytes Page：7 Pages

N-Channel 40-V (D-S) MOSFET

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N-Channel 4 -V (D-S) MOSFET

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