型号 功能描述 生产厂家 企业 LOGO 操作
NP100P04PLG

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D

NEC

瑞萨

NP100P04PLG

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

NP100P04PLG

Power MOSFETs for Automotive

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D

NEC

瑞萨

SWITCHING P-CHANNEL POWER MOS FET

文件:300.45 Kbytes Page:9 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET

文件:300.45 Kbytes Page:9 Pages

RENESAS

瑞萨

SWITCHING P-CHANNEL POWER MOS FET

文件:300.45 Kbytes Page:9 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID

NEC

瑞萨

Product Scout Automotive

文件:5.67799 Mbytes Page:6 Pages

RENESAS

瑞萨

P-Channel Enhancement Mode Power MOSFET

Description The G100P04KA uses advanced trench technology to provid eexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

P-Channel Enhancement Mode Power MOSFET

Description The G100P04KH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

NP100P04PLG产品属性

  • 类型

    描述

  • 型号

    NP100P04PLG

  • 制造商

    NEC

  • 制造商全称

    NEC

  • 功能描述

    MOS FIELD EFFECT TRANSISTOR

更新时间:2025-12-31 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Renesas(瑞萨)
24+
标准封装
12048
支持大陆交货,美金交易。原装现货库存。
RENESAS
1932+
TO-263
537
一级代理,专注军工、汽车、医疗、工业、新能源、电力
RENESAS/瑞萨
22+
TO-263
100000
代理渠道/只做原装/可含税
Renesas(瑞萨)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
Renesas
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
Renesas
25+
MP-25ZPTO-263
35400
独立分销商 公司只做原装 诚心经营 免费试样正品保证
NEC
22+
TO252
3000
原装正品,支持实单
Renesas(瑞萨)
24+
32000
全新原厂原装正品现货,低价出售,实单可谈
RENESAS/瑞萨
24+
37279
郑重承诺只做原装进口现货
RENESAS/瑞萨
22+
TO-263
9000
专业配单,原装正品假一罚十,代理渠道价格优

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