位置：首页 > IC中文资料第6108页 > NP100P04PLG
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NP100P04PLG | MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D | NEC 瑞萨 |   | |
NP100P04PLG | Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | |
NP100P04PLG | Power MOSFETs for Automotive | RENESAS 瑞萨 | | |
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D | NEC 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.7 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID(D | NEC 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：300.45 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：300.45 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
SWITCHING P-CHANNEL POWER MOS FET 文件：300.45 Kbytes Page：9 Pages | RENESAS 瑞萨 | | ||
MOS FIELD EFFECT TRANSISTOR DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 3.5 mΩ MAX. (VGS = −10 V, ID = −50 A) RDS(on)2 = 5.1 mΩ MAX. (VGS = −4.5 V, ID = −50 A) • High current rating: ID | NEC 瑞萨 | | ||
Product Scout Automotive 文件：5.67799 Mbytes Page：6 Pages | RENESAS 瑞萨 | | ||
P-Channel Enhancement Mode Power MOSFET Description The G100P04KA uses advanced trench technology to provid eexcellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
P-Channel Enhancement Mode Power MOSFET Description The G100P04KH uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | |
NP100P04PLG产品属性
- 类型
描述
- 型号
NP100P04PLG
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
MOS FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Renesas(瑞萨) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
NEC |
2450+ |
TP-263 |
6540 |
只做原厂原装正品终端客户免费申请样品 |
|||
Renesas |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
RENESAS/瑞萨 |
23+ |
TO-263 |
89630 |
当天发货全新原装现货 |
|||
Renesas(瑞萨) |
24+ |
32000 |
全新原厂原装正品现货,低价出售,实单可谈 |
||||
ST/意法 |
23+ |
TO-223 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
Renesas(瑞萨) |
24+ |
标准封装 |
12048 |
支持大陆交货,美金交易。原装现货库存。 |
|||
RENESAS/瑞萨 |
22+ |
TO-263 |
12500 |
瑞萨全系列在售,终端可出样品 |
|||
RENESAS/瑞萨 |
24+ |
TO-263 |
60000 |
||||
RENESAS/瑞萨 |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
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NP100P04PLG规格书下载地址
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