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型号 功能描述 生产厂家&企业 LOGO 操作
NESG3031M05

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG3031M05

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG3031M05-A

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG3031M05-T1

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG3031M05-T1

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG3031M05-T1-A

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG3031M14

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG3031M14-A

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG3031M14-T3

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG3031M14-T3-A

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG3031M05

NPNSILICONGERMANIUMRFTRANSISTOR

文件：334.1 Kbytes Page：9 Pages

CEL

California Eastern Laboratories

CEL
NESG3031M05-EVNF58

包装：盒 描述：EVAL BOARD NESG3031M05 5.8GHZ 开发板，套件，编程器 射频评估和开发套件，开发板

CEL

California Eastern Laboratories

CEL
NESG3031M05-EVNF58-A

包装：盒 描述：EVAL BOARD NESG3031M05 开发板，套件，编程器 射频评估和开发套件，开发板

CEL

California Eastern Laboratories

CEL
NESG3031M05-T1

NPNSILICONGERMANIUMRFTRANSISTOR

文件：334.1 Kbytes Page：9 Pages

CEL

California Eastern Laboratories

CEL
NESG3031M05-T1-A

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG)

文件：673.12 Kbytes Page：9 Pages

CEL

California Eastern Laboratories

CEL
NESG3031M14

NPNSiGeHIGHFREQUENCYTRANSISTOR

文件：551.51 Kbytes Page：9 Pages

CEL

California Eastern Laboratories

CEL
NESG3031M14

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

文件：99.46 Kbytes Page：3 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG3031M14-A

NPNSiGeHIGHFREQUENCYTRANSISTOR

文件：551.51 Kbytes Page：9 Pages

CEL

California Eastern Laboratories

CEL
NESG3031M14-T3

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

文件：99.46 Kbytes Page：3 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG3031M14-T3-A

NPNSiGeHIGHFREQUENCYTRANSISTOR

文件：551.51 Kbytes Page：9 Pages

CEL

California Eastern Laboratories

CEL
ADP3031

2MHzPWMBoostSwitchingRegulator

GENERALDESCRIPTION TheADP3031isahighfrequency,step-upDC-DCswitchingregulatorcapableof12VboostedoutputvoltageinaspacesavingMSOP-8package.Itprovideshighefficiency,low-noiseoperation,andiseasytouse.Capableofoperatingupto2MHz,thehighswitchingfrequencyand

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
ADP3031ARM

2MHzPWMBoostSwitchingRegulator

GENERALDESCRIPTION TheADP3031isahighfrequency,step-upDC-DCswitchingregulatorcapableof12VboostedoutputvoltageinaspacesavingMSOP-8package.Itprovideshighefficiency,low-noiseoperation,andiseasytouse.Capableofoperatingupto2MHz,thehighswitchingfrequencyand

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

AD
3031

727KHzBandpass

文件：49.9 Kbytes Page：3 Pages

KRKR Electronics, Inc.

KR Electronics, Inc.

KR
ACTF3031

RFFilter

文件：216.9 Kbytes Page：2 Pages

ACTAdvanced Crystal Technology

先进的晶体先进的晶体技术

ACT
AH3031

LatchTypeHallSensor

文件：707.25 Kbytes Page：9 Pages

AHNJNANJING AH ELECTRONICS CO., LTD

AH电子南京AH电子科技有限公司

AHNJ

NESG3031产品属性

  • 类型

    描述

  • 型号

    NESG3031

  • 功能描述

    射频硅锗晶体管 2.4GHz to 5.8GHz OSC GERMANIUM HBT

  • RoHS

    否

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

NESG3031供应商更多...

更新时间：2024-5-22 19:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市凌旭科技有限公司
NESG3031M05-T1
RENESAS
2016+
SOT343
168500
只做原装,假一罚十,公司可开17%增值税发票!
询价
深圳市华睿芯科技有限公司
NESG3031M05-T1
NEC
23+
SOT-343
20000
原厂原装正品现货
询价
中天科工半导体（深圳）有限公司
NESG3031M05-T1
RENES
20+
SOT343
19570
原装优势主营型号-可开原型号增税票
询价
易创佳业科技（深圳）有限公司
NESG3031M05-T1
NEC
23+
SOT-343
6000
原装正品，支持实单
询价
深圳市永贝尔科技有限公司
NESG3031M05-T1
CEL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
询价
深圳市大联智电子有限公司
NESG3031M05-T1-A超小型管
CEL
22+
SOT-343
354000
询价
深圳市得捷芯城科技有限公司
NESG3031M05-T1-A
RENESAS/瑞萨
23+
NA/
3000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市赛美科科技有限公司
NESG3031M05-T1-A超小型管
CEL
新年份
SOT-343
15000
原装正品大量现货,要多可发货,实单带接受价来谈!
询价
深圳市科恒伟业电子有限公司
NESG3031M05-T1-A
RENESAS
1742+
SOT343
98215
只要网上有绝对有货!只做原装正品!
询价
深圳市科思奇电子科技有限公司
NESG3031M05-T1
NEC
22+
SOT-343
360000
进口原装房间现货实库实数
询价

NESG3031芯片相关品牌

  • API
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  • crydom
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  • SILABS
  • SUPERWORLD

NESG3031规格书下载地址

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NESG3031数据表相关新闻

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