位置：首页 > IC中文资料第7192页 > NESG3031M14
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG3031M14 | NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP | RENESAS 瑞萨 |   | |
NESG3031M14 | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 文件：99.46 Kbytes Page：3 Pages | NEC 瑞萨 | | |
NESG3031M14 | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR | RENESAS 瑞萨 | | |
NESG3031M14 | NPN SiGe HIGH FREQUENCY TRANSISTOR | CEL | | |
NESG3031M14 | NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：551.51 Kbytes Page：9 Pages | CEL | | |
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP | RENESAS 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP | RENESAS 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP | RENESAS 瑞萨 | | ||
NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：551.51 Kbytes Page：9 Pages | CEL | | ||
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 文件：99.46 Kbytes Page：3 Pages | NEC 瑞萨 | | ||
NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：551.51 Kbytes Page：9 Pages | CEL | |
NESG3031M14产品属性
- 类型
描述
- 型号
NESG3031M14
- 制造商
CEL
- 制造商全称
CEL
- 功能描述
NPN SiGe HIGH FREQUENCY TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
24+ |
NA/ |
4276 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
RENESAS |
2016+ |
SOT523-4 |
10000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
8 |
SOT143 |
3100 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RENESAS |
22+ |
SOT523-4 |
30000 |
只做原装正品 |
|||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
RENESAS/瑞萨 |
2450+ |
SOT343 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
RENESAS |
2025+ |
SOT523-4 |
5185 |
全新原厂原装产品、公司现货销售 |
|||
RENESAS/瑞萨 |
23+ |
SOT-743 |
27000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
RENESAS/瑞萨 |
24+ |
SOT343 |
79171 |
只做全新原装进口现货 |
|||
NEC |
24+ |
SOT343 |
21574 |
郑重承诺只做原装进口现货 |
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NESG3031M14规格书下载地址
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DdatasheetPDF页码索引
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