位置：首页 > IC中文资料第7192页 > NESG3031M14
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG3031M14 | NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP | RENESAS 瑞萨 |   | |
NESG3031M14 | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 文件：99.46 Kbytes Page：3 Pages | NEC 瑞萨 | | |
NESG3031M14 | NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR | RENESAS 瑞萨 | | |
NESG3031M14 | NPN SiGe HIGH FREQUENCY TRANSISTOR | CEL | | |
NESG3031M14 | NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：551.51 Kbytes Page：9 Pages | CEL | | |
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP | RENESAS 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP | RENESAS 瑞萨 | | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP | RENESAS 瑞萨 | | ||
NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：551.51 Kbytes Page：9 Pages | CEL | | ||
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 文件：99.46 Kbytes Page：3 Pages | NEC 瑞萨 | | ||
NPN SiGe HIGH FREQUENCY TRANSISTOR 文件：551.51 Kbytes Page：9 Pages | CEL | |
NESG3031M14产品属性
- 类型
描述
- 型号
NESG3031M14
- 制造商
CEL
- 制造商全称
CEL
- 功能描述
NPN SiGe HIGH FREQUENCY TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
24+ |
SOT343 |
79171 |
只做全新原装进口现货 |
|||
CEL |
24+ |
原厂原装 |
5000 |
原装正品 |
|||
NEC |
2025+ |
SOT343 |
5000 |
原装进口价格优 请找坤融电子! |
|||
NEC |
24+ |
SOT343 |
21574 |
郑重承诺只做原装进口现货 |
|||
NEC |
25+ |
SOT143 |
10000 |
原装现货假一罚十 |
|||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
RENESAS/瑞萨 |
24+ |
65200 |
|||||
NEC |
23+ |
SOT523-4 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
23+ |
SOT143 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
RENESAS |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
NESG3031M14规格书下载地址
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DdatasheetPDF页码索引
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