NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)

FEATURES

• The device is an ideal choice for low noise, high-gain amplification

NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz

NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz

NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz

• Maximum stable power gain: MSG = 15.0 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz

• SiGe HBT technology (UHS3) adopted: fmax = 110 GHz

• 4-pin lead-less minimold (M14, 1208 PKG)