位置：首页 > IC中文资料第350页 > NESG3031M05-A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG3031M05-A | NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP., | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP., | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NECsNPNSiGeHIGHFREQUENCYTRANSISTOR FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY: | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
NPNSILICONGERMANIUMRFTRANSISTOR 文件：334.1 Kbytes Page：9 Pages | CEL California Eastern Laboratories |  | |
NESG3031M05-A产品属性
- 类型
描述
- 型号
NESG3031M05-A
- 功能描述
射频硅锗晶体管 NPN SiGe High Freq
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENES |
2020+ |
SOT343 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
RENES |
20+ |
SOT343 |
19570 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
23+ |
SOT-343 |
20000 |
原厂原装正品现货 |
|||
NEC |
21+ |
SOT343 |
2970 |
只做原装,绝对现货,原厂代理商渠道,欢迎电话微信查 |
|||
NEC |
23+ |
原厂封装 |
13528 |
振宏微原装正品,假一罚百 |
|||
Renesas(瑞萨) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
LSSJ |
1736+ |
SOT343 |
8298 |
只做进口原装正品假一赔十! |
|||
NEC |
21+ |
SOT-343 |
35200 |
全新原装现货/假一罚百! |
|||
NEC |
23+ |
SOT343 |
30000 |
代理全新原装现货,价格优势 |
|||
RENES |
21+ |
SOT343 |
5000 |
全新原装现货 价格优势 |
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DdatasheetPDF页码索引
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