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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG3031M05 | NECsNPNSiGeHIGHFREQUENCYTRANSISTOR FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY: | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NESG3031M05 | NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP., | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
NESG3031M05 | NPNSILICONGERMANIUMRFTRANSISTOR 文件：334.1 Kbytes Page：9 Pages | CEL California Eastern Laboratories |  | |
NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP., | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP., | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NECsNPNSiGeHIGHFREQUENCYTRANSISTOR FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY: | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP., | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
包装：盒 描述：EVAL BOARD NESG3031M05 5.8GHZ 开发板，套件，编程器 射频评估和开发套件，开发板 | CEL California Eastern Laboratories | | | |
包装：盒 描述：EVAL BOARD NESG3031M05 开发板，套件，编程器 射频评估和开发套件，开发板 | CEL California Eastern Laboratories | | | |
NPNSILICONGERMANIUMRFTRANSISTOR 文件：334.1 Kbytes Page：9 Pages | CEL California Eastern Laboratories | | | |
NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) 文件：673.12 Kbytes Page：9 Pages | CEL California Eastern Laboratories | | |
NESG3031M05产品属性
- 类型
描述
- 型号
NESG3031M05
- 功能描述
射频硅锗晶体管 RO 551-NESG3031M05-A
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NECT1K |
22+ |
SOT-343 |
32500 |
郑重承诺只做原装进口货 |
|||
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
NEC |
22+ |
SOT-343 |
18560 |
假一赔十全新原装现货特价供应工厂客户可放款 |
|||
RENESAS |
21+ |
SOT343 |
3300 |
||||
ROHM |
2022+ |
SOP8 |
6000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
|||
NEC |
23+ |
NA |
5556 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
|||
NEC |
2018+ |
SOP/DIPQFP |
276 |
原装假一赔十 |
|||
RENESAS |
2023+ |
SOT343 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
RENES |
21+ |
SOT343 |
5000 |
全新原装现货 价格优势 |
|||
RENESAS |
2016+ |
SOT343 |
168500 |
只做原装,假一罚十,公司可开17%增值税发票! |
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NESG3031M05规格书下载地址
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NESG3031M05数据表相关新闻
NEO-F10T-00B
进口代理
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VoxPower的NEVO+1200系列采用紧凑轻巧的封装，可提供1200W功率
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VoxPower的NEVO+600可配置电源采用紧凑的5x3x1.61封装，可提供600W功率
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DdatasheetPDF页码索引
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