型号 功能描述 生产厂家&企业 LOGO 操作
NESG3031M05

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
NESG3031M05

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
NESG3031M05

NPNSILICONGERMANIUMRFTRANSISTOR

文件:334.1 Kbytes Page:9 Pages

CEL

California Eastern Laboratories

CEL

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NECsNPNSiGeHIGHFREQUENCYTRANSISTOR

FEATURES •LOWNOISEFIGUREANDHIGH-GAIN NF=0.95dBTYP,Ga=10dBTYP@VCE=2V,IC=6mA,f=5.2GHz NF=1.1dBTYP,Ga=9.5dBTYP@VCE=2V,IC=6mA,f=5.8GHz •MAXIMUMSTABLEPOWERGAIN: MSG=14.0dBTYP@VCE=3V,IC=20mA,f=5.8GHz •SiGeHBTTECHNOLOGY:

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION FLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

包装:盒 描述:EVAL BOARD NESG3031M05 5.8GHZ 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

California Eastern Laboratories

CEL

包装:盒 描述:EVAL BOARD NESG3031M05 开发板,套件,编程器 射频评估和开发套件,开发板

CEL

California Eastern Laboratories

CEL

NPNSILICONGERMANIUMRFTRANSISTOR

文件:334.1 Kbytes Page:9 Pages

CEL

California Eastern Laboratories

CEL

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATIONFLAT-LEAD4-PINTHIN-TYPESUPERMINIMOLD(M05,2012PKG)

文件:673.12 Kbytes Page:9 Pages

CEL

California Eastern Laboratories

CEL

NESG3031M05产品属性

  • 类型

    描述

  • 型号

    NESG3031M05

  • 功能描述

    射频硅锗晶体管 RO 551-NESG3031M05-A

  • RoHS

  • 制造商

    Infineon Technologies 发射极 - 基极电压

  • 封装

    Reel

更新时间:2024-6-16 8:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NECT1K
22+
SOT-343
32500
郑重承诺只做原装进口货
CEL
23+
原厂原包
19960
只做进口原装 终端工厂免费送样
NEC
22+
SOT-343
18560
假一赔十全新原装现货特价供应工厂客户可放款
RENESAS
21+
SOT343
3300
ROHM
2022+
SOP8
6000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
NEC
23+
NA
5556
航宇科工半导体-中国航天科工集团战略合作伙伴!
NEC
2018+
SOP/DIPQFP
276
原装假一赔十
RENESAS
2023+
SOT343
8800
正品渠道现货 终端可提供BOM表配单。
RENES
21+
SOT343
5000
全新原装现货 价格优势
RENESAS
2016+
SOT343
168500
只做原装,假一罚十,公司可开17%增值税发票!

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