NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF= 0.95 dB TYP, Ga= 10 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.2 GHz NF= 1.1 dB TYP, Ga= 9.5 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.8 GHz • MAXIMUM STABLE POWER GAIN: MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz • SiGe HBT TECHNOLOGY:

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP.,

NPN SILICON GERMANIUM RF TRANSISTOR

文件：334.1 Kbytes Page：9 Pages

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP.,

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP.,

NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR

FEATURES • LOW NOISE FIGURE AND HIGH-GAIN NF= 0.95 dB TYP, Ga= 10 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.2 GHz NF= 1.1 dB TYP, Ga= 9.5 dB TYP @ VCE= 2 V, IC= 6 mA, f = 5.8 GHz • MAXIMUM STABLE POWER GAIN: MSG = 14.0 dB TYP @ VCE = 3 V, IC = 20 mA, f = 5.8 GHz • SiGe HBT TECHNOLOGY:

NPN SILICON GERMANIUM RF TRANSISTOR

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP.,

包装：盒 描述：EVAL BOARD NESG3031M05 5.8GHZ 开发板，套件，编程器 射频评估和开发套件，开发板

包装：盒 描述：EVAL BOARD NESG3031M05 开发板，套件，编程器 射频评估和开发套件，开发板

NPN SILICON GERMANIUM RF TRANSISTOR

文件：334.1 Kbytes Page：9 Pages

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)

文件：673.12 Kbytes Page：9 Pages