位置：首页 > IC中文资料第1682页 > NESG3031M14-A
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG3031M14-A | NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NESG3031M14-A | NPNSiGeHIGHFREQUENCYTRANSISTOR 文件：551.51 Kbytes Page：9 Pages | CEL California Eastern Laboratories |  | |
NPNSILICONGERMANIUMRFTRANSISTOR NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 4-PINLEAD-LESSMINIMOLD(M14,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.6dBTYP.,Ga=16.0dBTYP.@VCE=2V,IC=6mA,f=2.4GHz NF=0.95dBTYP.,Ga=10.0dBTYP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NECsNPNSiGeHIGHFREQUENCYTRANSISTOR 文件：99.46 Kbytes Page：3 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
NPNSiGeHIGHFREQUENCYTRANSISTOR 文件：551.51 Kbytes Page：9 Pages | CEL California Eastern Laboratories | | |
NESG3031M14-A产品属性
- 类型
描述
- 型号
NESG3031M14-A
- 功能描述
射频硅锗晶体管 NPN SiGe High Freq
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
SOT523-4 |
50000 |
全新原装正品现货,支持订货 |
|||
NEC |
22+ |
SOT343 |
54990 |
郑重承诺只做原装进口货 |
|||
RENESAS |
22+ |
SOT523-4 |
30000 |
只做原装正品 |
|||
NEC |
23+ |
SOT143 |
8650 |
受权代理!全新原装现货特价热卖! |
|||
CEL |
17+ |
原厂原装 |
5000 |
原装正品 |
|||
NEC |
23+ |
NA/ |
9300 |
原装现货,当天可交货,原型号开票 |
|||
NEC-日本电气 |
24+25+/26+27+ |
SOT-523-4 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
NEC |
SOT143 |
265209 |
假一罚十原包原标签常备现货! |
||||
NEC |
22+ |
SOT523-4 |
28600 |
只做原装正品现货假一赔十一级代理 |
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NESG3031M14-A规格书下载地址
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NESG3031M14-A数据表相关新闻
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2019-9-6
DdatasheetPDF页码索引
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