C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & Hi

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION NECs NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NECs stringe

HETERO JUNCTION FIELDEFFECT TRANSISTOR

DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

丝印代码：K；HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY

丝印代码：K；HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

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C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

文件：135.99 Kbytes Page：6 Pages

SUPER LOW NOISE HJ FET

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封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 4V 12GHZ S01 分立半导体产品 晶体管 - FET，MOSFET - 射频

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

SUPER LOW NOISE HJ FET

文件：414.97 Kbytes Page：7 Pages

SUPER LOW NOISE HJ FET

文件：414.97 Kbytes Page：7 Pages

封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 4V 12GHZ S01 分立半导体产品 晶体管 - FET，MOSFET - 射频

MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCHES

MICROPOWER, ULTRA-SENSITIVE HALL-EFFECT SWITCHES The A3209Ex and A3210Ex integrated circuits are ultra-sensitive, pole independent Hall-effect switches with a latched digital output. They are especially suited for operation in battery-operated, hand-held equipment such as cellular and cordles

200 V - 1,000 V Three Phase Bridge 4.0 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge 4.0 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge

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WASHERS

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Heyco® Original Series-35 Liquid Tight Cordgrips

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