DESCRIPTION

NECs NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications.

NECs stringent quality assurance and test procedures assure the highest reliability and performance.

FEATURES

• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz

• HIGH ASSOCIATED GAIN: 13.0 dB Typ at f = 12 GHz

• GATE LENGTH: ≤0.2 µm

• GATE WIDTH: 160 µm