位置：首页 > IC中文资料第2297页 > NE3210S01-T1B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE3210S01-T1B | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain | NEC 瑞萨 |   | |
NE3210S01-T1B | HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY | RENESAS 瑞萨 | | |
NE3210S01-T1B | 封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 4V 12GHZ S01 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL California Eastern Labs | | |
NE3210S01-T1B | SUPER LOW NOISE HJ FET 文件：414.97 Kbytes Page：7 Pages | CEL California Eastern Labs | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY | RENESAS 瑞萨 | | ||
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain | NEC 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：414.97 Kbytes Page：7 Pages | CEL California Eastern Labs | |
NE3210S01-T1B产品属性
- 类型
描述
- 型号
NE3210S01-T1B
- 功能描述
射频GaAs晶体管 Super Lo Noise HJFET
- RoHS
否
- 制造商
TriQuint Semiconductor
- 技术类型
pHEMT
- 频率
500 MHz to 3 GHz
- 增益
10 dB
- 噪声系数
正向跨导
- gFS（最大值/最小值）
4 S 漏源电压
- 闸/源击穿电压
- 8 V
- 漏极连续电流
3 A
- 最大工作温度
+ 150 C
- 功率耗散
10 W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC(日电电子) |
2405+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
RENESAS/瑞萨 |
24+ |
BGA |
9600 |
原装现货,优势供应,支持实单! |
|||
NEC |
2025+ |
TO-50 |
4325 |
全新原厂原装产品、公司现货销售 |
|||
RENESAS |
24+ |
TO-50 |
5000 |
十年沉淀唯有原装 |
|||
Renesas |
23+ |
SMT86 |
11143 |
全新原装正品现货可开票 |
|||
NEC |
21+ |
SMT-86 |
10000 |
原装现货假一罚十 |
|||
NEC |
2016+ |
SMT86 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
RENESAS/瑞萨 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
Renesas |
24+ |
SMT-86 |
40000 |
原装正品 特价现货(香港 新加坡 日本) |
|||
RENESAS |
23+ |
TO-50 |
20000 |
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NE3210S01-T1B规格书下载地址
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2021-8-23NE3512S02-T1C-A
NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
2019-12-17NE3512
NE3512，全新原装当天发货或门市自取0755-82732291，
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2019-3-22
DdatasheetPDF页码索引
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