C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & Hi

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

DESCRIPTION NECs NE321000 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for commercial, industrial and space applications. NECs stringe

HETERO JUNCTION FIELDEFFECT TRANSISTOR

DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

文件：135.99 Kbytes Page：6 Pages

C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

ULTRA LOW NOISE PSEUDOMORPHIC HJ FET

文件：135.99 Kbytes Page：6 Pages

1M x 32-Bit Dynamic RAM Module 2M x 16-Bit Dynamic RAM Module

The HYM 321000S/GS-50/-60 is a 4 MByte DRAM module organized as 1 048 576 words by 32- bit in a 72-pin single-in-line package comprising two HYB 5118160BSJ 1M × 16 DRAMs in 400 mil wide SOJ-packages mounted together with two 0.2 µF ceramic decoupling capacitors on a PC board. Advanced Information