DESCRIPTION

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its

excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and

space applications.

FEATURES

• Super Low Noise Figure & High Associated Gain

NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz

• Gate Length: Lg £ 0.20 mm

• Gate Width : Wg = 160 mm