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NE321000中文资料
NE321000数据手册规格书PDF详情
DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.
FEATURES
• Super Low Noise Figure & High Associated Gain
NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
• Gate Length: Lg ≤ 0.20 µm
• Gate Width : Wg = 160 µm
NE321000产品属性
- 类型
描述
- 型号
NE321000
- 制造商
CEL
- 制造商全称
CEL
- 功能描述
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
更新时间：2025-11-26 22:50:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
NA |
12000 |
全新原装假一赔十 |
|||
NEC |
25+ |
2789 |
全新原装自家现货!价格优势! |
||||
NEC |
6000 |
面议 |
19 |
SMT86 |
|||
NEC |
23+ |
SMT86 |
65480 |
||||
NEC |
2023+ |
213 |
|||||
NEC |
23+ |
SMT-86 |
3000 |
原装正品假一罚百!可开增票! |
|||
NEC |
21+ |
STM86 |
10000 |
原装现货假一罚十 |
|||
NEC |
22+ |
SMT |
3000 |
原装正品,支持实单 |
|||
NEC |
2023+ |
5800 |
进口原装,现货热卖 |
||||
NEC |
NEW |
SMT86 |
9562 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
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NE321000 芯片相关型号
NEC相关芯片制造商
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