位置：首页 > IC中文资料第577页 > NE3210S01
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NE3210S01 | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain | NEC 瑞萨 |   | |
NE3210S01 | HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY | RENESAS 瑞萨 | | |
NE3210S01 | SUPER LOW NOISE HJ FET 文件：414.97 Kbytes Page：7 Pages | CEL | | |
NE3210S01 | 封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 4V 12GHZ S01 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL | | |
NE3210S01 | X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET | RENESAS 瑞萨 | | |
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY | RENESAS 瑞萨 | | ||
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain | NEC 瑞萨 | | ||
X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain | NEC 瑞萨 | | ||
HETERO JUNCTION FIELD EFFECT TRANSISTOR DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY | RENESAS 瑞萨 | | ||
SUPER LOW NOISE HJ FET 文件：414.97 Kbytes Page：7 Pages | CEL | | ||
SUPER LOW NOISE HJ FET 文件：414.97 Kbytes Page：7 Pages | CEL | | ||
封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：FET RF 4V 12GHZ S01 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL | |
NE3210S01产品属性
- 类型
描述
- 型号
NE3210S01
- 功能描述
射频GaAs晶体管 Super Lo Noise HJFET
- RoHS
否
- 制造商
TriQuint Semiconductor
- 技术类型
pHEMT
- 频率
500 MHz to 3 GHz
- 增益
10 dB
- 噪声系数
正向跨导
- gFS（最大值/最小值）
4 S 漏源电压
- 闸/源击穿电压
- 8 V
- 漏极连续电流
3 A
- 最大工作温度
+ 150 C
- 功率耗散
10 W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2016+ |
SMT86 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
23+ |
NA |
12000 |
全新原装假一赔十 |
|||
NEC |
24+ |
4K/RSMT |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
NEC |
24+ |
SMT86 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
Renesas瑞萨 |
2019 |
SMT-86 |
36 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NEC |
22+ |
SMT-86 |
30000 |
只做原装正品 |
|||
Renesas |
23+ |
SMD4000包装 |
10298 |
NE3210S01-T1B原装特价 射频结栅场效应晶体管 13.5 dB N-Channel |
|||
RENESAS/瑞萨 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
NEC(日电电子) |
2526+ |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
RENESAS/瑞萨 |
23+ |
SMT86 |
32078 |
10年以上分销商,原装进口件,服务型企业 |
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NE3210S01规格书下载地址
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2021-8-23NE3512S02-T1C-A
NE3512S02-T1C-A，全新原装当天发货或门市自取0755-82732291.
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NE3512，全新原装当天发货或门市自取0755-82732291，
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2019-3-22
DdatasheetPDF页码索引
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