型号 功能描述 生产厂家&企业 LOGO 操作
NE3210S01

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

NEC

瑞萨

NE3210S01

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY

RENESAS

瑞萨

NE3210S01

SUPER LOW NOISE HJ FET

文件:414.97 Kbytes Page:7 Pages

CEL

California Eastern Labs

NE3210S01

封装/外壳:4-SMD 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:FET RF 4V 12GHZ S01 分立半导体产品 晶体管 - FET,MOSFET - 射频

CEL

California Eastern Labs

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY

RENESAS

瑞萨

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

NEC

瑞萨

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain

NEC

瑞萨

HETERO JUNCTION FIELD EFFECT TRANSISTOR

DESCRIPTION The NE3210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TY

RENESAS

瑞萨

SUPER LOW NOISE HJ FET

文件:414.97 Kbytes Page:7 Pages

CEL

California Eastern Labs

SUPER LOW NOISE HJ FET

文件:414.97 Kbytes Page:7 Pages

CEL

California Eastern Labs

封装/外壳:4-SMD 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:FET RF 4V 12GHZ S01 分立半导体产品 晶体管 - FET,MOSFET - 射频

CEL

California Eastern Labs

NE3210S01产品属性

  • 类型

    描述

  • 型号

    NE3210S01

  • 功能描述

    射频GaAs晶体管 Super Lo Noise HJFET

  • RoHS

  • 制造商

    TriQuint Semiconductor

  • 技术类型

    pHEMT

  • 频率

    500 MHz to 3 GHz

  • 增益

    10 dB

  • 噪声系数

    正向跨导

  • gFS(最大值/最小值)

    4 S 漏源电压

  • 闸/源击穿电压

    - 8 V

  • 漏极连续电流

    3 A

  • 最大工作温度

    + 150 C

  • 功率耗散

    10 W

更新时间:2025-8-12 16:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
2015+
2710
公司现货库存
Renesas
23+
SMT86
11143
全新原装正品现货可开票
24+
3000
公司存货
NEC
23+
TO-59
8510
原装正品代理渠道价格优势
NEC
2023+
213
NEC
23+
SMT-86
3000
原装正品假一罚百!可开增票!
NEC
24+
十字架
4897
绝对原装!现货热卖!
CEL
24+
原厂原封
2500
原装正品
RENESAS
SMT86
68500
一级代理 原装正品假一罚十价格优势长期供货
Renesas
17+
SMT86
3089
全新原装公司现货

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