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MRF5晶体管资料

MRF501别名：MRF501三极管、MRF501晶体管、MRF501晶体三极管
MRF501生产厂家：美国摩托罗拉半导体公司
MRF501制作材料：Si-NPN
MRF501性质：超高频/特高频（UHF）_前置放大（V）_混频（M）
MRF501封装形式：直插封装
MRF501极限工作电压：
MRF501最大电流允许值：
MRF501最大工作频率：1000MHZ
MRF501引脚数：4
MRF501最大耗散功率：
MRF501放大倍数：
MRF501图片代号：D-13
MRF501vtest：0
MRF501htest：1000000000
MRF501atest：0
MRF501wtest：0

MRF501代换 MRF501用什么型号代替：BF357,BF377,BF378,3DG44A,

MRF5价格

参考价格：￥1.1225

型号：MRF50-BULK 品牌：Bel 备注：这里有MRF5多少钱，2025年最近7天走势，今日出价，今日竞价，MRF5批发/采购报价，MRF5行情走势销售排行榜，MRF5报价。

型号	功能描述	生产厂家企业	LOGO
MRF5	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	bel	bel
MRF5	TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES 文件：1.37879 Mbytes Page：4 Pages	bel	bel
MRF50	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	bel	bel
MRF500	Fast Acting Radial Lead Micro Fuse Series Fast Acting Radial Lead Micro Fuse Series	bel	bel
MRF5003	N-CHANNEL BROADBAND RF POWER FET The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt and 12.5 Volt mobile, portable, and base station FM equip	Motorola 摩托罗拉	Motorola
MRF5003	VHF POWER MOSFET DESCRIPTION: The ASI MRF5003 is common source device, designed for broadband amplifier applications at frequencies to 520 MHz. FEATURES: • PG = 9.5 dB @ 3.0 W 512 MHz • Surface mount package	ASI	ASI
MRF5007	N-CHANNEL BROADBAND RF POWER FET The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt portable FM equipment. • Guaranteed Performance at 512 M	Motorola 摩托罗拉	Motorola
MRF5007R1	N-CHANNEL BROADBAND RF POWER FET The MRF5007 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 7.5 Volt portable FM equipment. • Guaranteed Performance at 512 M	Motorola 摩托罗拉	Motorola
MRF5015	N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. • Guaranteed Performance at 512	Motorola 摩托罗拉	Motorola
MRF5015	RF Power Field Effect Transistor Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. • Guaranteed Performance at 512	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF5035	N-CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common source amplifier applications in 12.5 volt mobile, and base station FM equipment. • Guaranteed Performance at 512	Motorola 摩托罗拉	Motorola
MRF517	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Gpe = 10 dB (typ) @ 60 mA, 300 MHz · 3 GHz Current-Gain Bandwidth Product (min) @ 60mA · Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz	Microsemi 美高森美	Microsemi
MRF517	NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI MRF517 is Designed for High Linearity Class A Amplifier Applications in the 100 to 500 MHz Frequency Range.	ASI	ASI
MRF5174	NPN RF POWER TRANSISTOR DESCRIPTION: The MRF5174 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 225 to 400 MHz Band. FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting	ASI	ASI
MRF5175	1NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. FEATURES: • Class C Operation • PG = 11 dB at 5.0 W/400 MHz • Omnigold™ Metalization System	ASI	ASI
MRF5176	RF POWER TRANSISTOR NPN SILICON	Motorola 摩托罗拉	Motorola
MRF5176	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF5176 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. FEATURES: • PG = 10 dB Typical at 400 MHz • Economical .280” Stud Package • Omnigold™ Metalization System	ASI	ASI
MRF5177	30W, 400MHZ RF POWER TRANSISTOR NPN SILICON	Motorola 摩托罗拉	Motorola
MRF5177A	30W, 400MHZ RF POWER TRANSISTOR NPN SILICON	Motorola 摩托罗拉	Motorola
MRF5211LT1	HIGH-FREQUENCY TRANSISTOR PNP SILICON The RF Line PNP Silicon High-Frequency Transistor Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast switching times. • High Current Gain–Bandwidth Product — fT = 3.4 GHz (Typ) @ IC = –35 mA	Motorola 摩托罗拉	Motorola
MRF544	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilate	Microsemi 美高森美	Microsemi
MRF544	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. Features • Silicon NPN, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 13.5 dB (t	ADPOW	ADPOW
MRF545	PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The ASI MRF545 is designed for High Frequency and medium and high resolution color video display monitors as well as other Applications requiring high breakdown characteristics.	ASI	ASI
MRF545	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. Features • Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilate	Microsemi 美高森美	Microsemi
MRF553	RF LOW POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Packag	Motorola 摩托罗拉	Motorola
MRF553	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im	ADPOW	ADPOW
MRF553	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im	Microsemi 美高森美	Microsemi
MRF553	NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF553 is designed for Low power amplifier applications. FEATURES: • 12.5 V, 175 MHz. • POUT = 1.5 W • GP = 11.5 min. • η = 60 (Typ)	ASI	ASI
MRF553	RF MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im	ADPOW	ADPOW
MRF553G	RF MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im	ADPOW	ADPOW
MRF555	RF LOW POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60 (Typ) • Cost Effective PowerMac	Motorola 摩托罗拉	Motorola
MRF555	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 470 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impr	Microsemi 美高森美	Microsemi
MRF555	NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range. FEATURES: • 12.5 V, 470 MHz. • POUT = 1.5 W • GP = 11 min. • η = 60 (Typ)	ASI	ASI
MRF555	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 470 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impr	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF557	RF LOW POWER TRANSISTOR NPN SILICON The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Pa	Motorola 摩托罗拉	Motorola
MRF557	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impro	ADPOW	ADPOW
MRF557G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impro	ADPOW	ADPOW
MRF559	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50 • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Sold	Microsemi 美高森美	Microsemi
MRF559	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50 • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Sold	ADPOW	ADPOW
MRF559G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = .5 W • Minimum Gain = 8.0 dB • Efficiency 50 • Cost Effective Macro X Package • Electroless Tin Plated Leads for Improved Sold	ADPOW	ADPOW
MRF571	NPN Silicon High-Frequency Transistors The RF Line NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost.	Motorola 摩托罗拉	Motorola
MRF571	NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI MRF571 is Designed for low-noise, wide dynamic range front end amplifiers. Applications up to 2.0 GHz. FEATURES: • Low Noise Figure • High Gain • Omnigold™ Metalization System	ASI	ASI
MRF571	NPN Silicon High-Frequency Transistors NPN Silicon High-Frequency Transistors ● High Gain-Bandwidth Product fT = 8.0 GHz (Typ) @ 50 mA ● Low Noise Figure NFmin = 1.6 dB (Typ) @ f = 1.0 GHz	AAC	AAC
MRF571	NPN SILICON HIGH FREQUENCY TRANSISTORS The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, wide dynamic range front end amplifiers, low-noise VCOs, and microwave power multipliers. • Low Noise • High Gain • Available in LowCost Plastic, High Reliability Ceramic orDie • State-of-the-Art Technology	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF5711LT1	NPN Silicon High-Frequency Transistors The RF Line NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This Motorola series of small–signal plastic transistors offers superior quality and performance at low cost.	Motorola 摩托罗拉	Motorola
MRF572	SILICON NPN RF TRANSISTOR DESCRIPTION: The MRF572is Designed for Low Noise General Purpose VHF,UHF Amplifier and Oscillator Applications.	ASI	ASI
MRF572	NPN SILICON HIGH FREQUENCY TRANSISTORS The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, wide dynamic range front end amplifiers, low-noise VCOs, and microwave power multipliers. • Low Noise • High Gain • Available in LowCost Plastic, High Reliability Ceramic orDie • State-of-the-Art Technology	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF577T1	The RF Small Signal Line NPN Silicon High-Frequency Transistor The RF Small Signal Line NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices such as pagers and hand–held phones. • Low Noise Figure NF = 1.5 dB (Typ) @ 1.0 GHz	Motorola 摩托罗拉	Motorola
MRF581	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package	Microsemi 美高森美	Microsemi
MRF581	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package	ADPOW	ADPOW
MRF581	NPN SILICON RF TRANSISTOR DESCRIPTION: The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold™ Metalization System	ASI	ASI
MRF581	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
MRF5811LT1	LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON The RF Line NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. • Low Noise (2.0 dB @ 500 MHz) • Low Intermodulation Distortion • High Gain • State–of–the–Art Technology Fine Line Geometry Arsenic Emitters Gold Top Metallization	Motorola 摩托罗拉	Motorola
MRF5812	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package	Microsemi 美高森美	Microsemi
MRF5812	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package	ADPOW	ADPOW
MRF5812	NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. FEATURES: • Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package	ASI	ASI
MRF5812G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package	ADPOW	ADPOW
MRF5812R1	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package	Microsemi 美高森美	Microsemi
MRF5812R2	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package	Microsemi 美高森美	Microsemi
MRF581A	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package	Microsemi 美高森美	Microsemi

MRF5产品属性

类型
描述
型号
MRF5
制造商
Ferraz Shawmut

MRF5供应商更多...

更新时间：2025-11-25 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	MRF5812R1	ON(安森美)	24+	标准封装	8048	全新原装正品/价格优惠/质量保障	询价
深圳市凌旭科技有限公司	MRF5015	MOTOROLA	2016+	TO-61	9000	只做原装,假一罚十,公司可开17%增值税发票!	询价
中天科工半导体（深圳）有限公司	MRF5S19130HR3	FREESCALE/飞思卡尔	25+	SMD	32000	FREESCALE/飞思卡尔全新特价MRF5S19130HR3即刻询购立享优惠#长期有货	询价
深圳市粤骏腾电子科技有限公司	MRF5003	FREESCALE	24+	TO-59	349	价格优势	询价
深圳市科恒伟业电子有限公司	MRF5S21090HR3	Freesca	23+	NI-780/金	7850	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市振宏微科技有限公司	MRF5007	MOTOROL	23+	NA	7264	专做原装正品,假一罚百!	询价
贸泽芯城（深圳）电子科技有限公司	MRF501	MOTOROLA/摩托罗拉	23+	TO-55r	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市近平电子有限公司	MRF581	MRF581MOTOROL	19+	TO-59	6000	原装现货,特价供应	询价
深圳市佳鑫美电子科技有限公司	MRF5003	MOTO	25+	SMD	2789	全新原装自家现货!价格优势!	询价
华富测量(深圳)传感技术有限公司	MRF5003.。.谢频管	原厂	2023+	模块	600	专营模块,继电器,公司原装现货	询价

MRF5芯片相关品牌

MRF5规格书下载地址

MRF5参数引脚图相关

MRF5数据表相关新闻

MRF448只有原装，现货，现货，现货！
MRF448只有原装，现货，现货，现货！
2024-5-21
MRF18060A
MRF18060A，全新原装现货0755-82732291当天发货或门市自取.
2020-12-7
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
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MRF6S21140HR5，MRF6S21140HS，MRF6S21140HSR5，MRF6S21190H
MRF6S21140HR5，MRF6S21140HS，MRF6S21140HSR5，MRF6S21190H
2020-3-26
MRF572
MRF572，全新原装当天发货或门市自取0755-82732291.
2019-11-30
MRF571
MRF571，全新原装当天发货或门市自取0755-82732291.
2019-11-30

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MRF5晶体管资料

MRF5价格

MRF5产品属性

MRF5供应商更多...

MRF5芯片相关品牌

MRF5规格书下载地址

MRF5参数引脚图相关

MRF5数据表相关新闻

MRF448只有原装，现货，现货，现货！

MRF18060A

MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S

MRF6S21140HR5，MRF6S21140HS，MRF6S21140HSR5，MRF6S21190H

MRF572

MRF571

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