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MRF5晶体管资料

MRF501别名：MRF501三极管、MRF501晶体管、MRF501晶体三极管
MRF501生产厂家：美国摩托罗拉半导体公司
MRF501制作材料：Si-NPN
MRF501性质：超高频/特高频（UHF）_前置放大（V）_混频（M）
MRF501封装形式：直插封装
MRF501极限工作电压：
MRF501最大电流允许值：
MRF501最大工作频率：1000MHZ
MRF501引脚数：4
MRF501最大耗散功率：
MRF501放大倍数：
MRF501图片代号：D-13
MRF501vtest：0
MRF501htest：1000000000
MRF501atest：0
MRF501wtest：0

MRF501代换 MRF501用什么型号代替：BF357,BF377,BF378,3DG44A,

MRF5价格

参考价格：￥1.1225

型号：MRF50-BULK 品牌：Bel 备注：这里有MRF5多少钱，2025年最近7天走势，今日出价，今日竞价，MRF5批发/采购报价，MRF5行情走势销售排行榜，MRF5报价。

型号	功能描述	生产厂家&企业
MRF5	Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries	bel Bel Fuse Inc.
MRF5	TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES 文件：1.37879 Mbytes Page：4 Pages	bel Bel Fuse Inc.
MRF50	Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries	bel Bel Fuse Inc.
MRF500	Fast Acting Radial Lead Micro Fuse Series FastActingRadialLeadMicroFuseSeries	bel Bel Fuse Inc.
MRF5003	N-CHANNEL BROADBAND RF POWER FET TheMRF5003isdesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesto520MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge–signal,commonsourceamplifierapplicationsin7.5Voltand12.5Voltmobile,portable,andbasestationFMequip	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF5003	VHF POWER MOSFET DESCRIPTION: TheASIMRF5003iscommonsourcedevice,designedforbroadbandamplifierapplicationsatfrequenciesto520MHz. FEATURES: •PG=9.5dB@3.0W512MHz •Surfacemountpackage	ASI Advanced Semiconductor
MRF5007	N-CHANNEL BROADBAND RF POWER FET TheMRF5007isdesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesto520MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge–signal,commonsourceamplifierapplicationsin7.5VoltportableFMequipment. •GuaranteedPerformanceat512M	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF5007R1	N-CHANNEL BROADBAND RF POWER FET TheMRF5007isdesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesto520MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge–signal,commonsourceamplifierapplicationsin7.5VoltportableFMequipment. •GuaranteedPerformanceat512M	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF5015	N-CHANNEL BROADBAND RF POWER FET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesto520MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge–signal,commonsourceamplifierapplicationsin12.5voltmobile,andbasestationFMequipment. •GuaranteedPerformanceat512	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF5015	RF Power Field Effect Transistor Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesto520MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge–signal,commonsourceamplifierapplicationsin12.5voltmobile,andbasestationFMequipment. •GuaranteedPerformanceat512	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MRF5035	N-CHANNEL BROADBAND RF POWER FET Designedforbroadbandcommercialandindustrialapplicationsatfrequenciesto520MHz.Thehighgainandbroadbandperformanceofthisdevicemakesitidealforlarge–signal,commonsourceamplifierapplicationsin12.5voltmobile,andbasestationFMequipment. •GuaranteedPerformanceat512	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF517	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features ·SiliconNPN,To-39packagedVHF/UHFTransistor ·Gpe=10dB(typ)@60mA,300MHz ·3GHzCurrent-GainBandwidthProduct(min)@60mA ·BroadbandNoiseFigure=7.5dB@50mA,300MHz	MicrosemiMicrosemi Corporation 美高森美美高森美公司
MRF517	NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: TheASIMRF517isDesignedforHighLinearityClassAAmplifierApplicationsinthe100to500MHzFrequencyRange.	ASI Advanced Semiconductor
MRF5174	NPN RF POWER TRANSISTOR DESCRIPTION: TheMRF5174isaCommonEmitterDeviceDesignedforClassA,ABandCAmplifierApplicationsinthe225to400MHzBand. FEATURESINCLUDE: •HighGain •GoldMetallization •EmitterBallasting	ASI Advanced Semiconductor
MRF5175	1NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF5175isDesignedforHighPowerClassCAmplifierin,225to400MHzMilitaryCommunication Equipment. FEATURES: •ClassCOperation •PG=11dBat5.0W/400MHz •Omnigold™MetalizationSystem	ASI Advanced Semiconductor
MRF5176	RF POWER TRANSISTOR NPN SILICON	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF5176	NPN SILICON RF POWER TRANSISTOR DESCRIPTION: TheASIMRF5176isDesignedforClassCAmplifiersin225to400MHzMilitaryCommunicationEquipment. FEATURES: •PG=10dBTypicalat400MHz •Economical.280”StudPackage •Omnigold™MetalizationSystem	ASI Advanced Semiconductor
MRF5177	30W, 400MHZ RF POWER TRANSISTOR NPN SILICON	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF5177A	30W, 400MHZ RF POWER TRANSISTOR NPN SILICON	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF5211LT1	HIGH-FREQUENCY TRANSISTOR PNP SILICON TheRFLine PNPSiliconHigh-FrequencyTransistor Designedprimarilyforuseinthehigh–gain,low–noisesmall–signalamplifiersforoperationupto3.5GHz.Alsousableinapplicationsrequiringfastswitchingtimes. •HighCurrentGain–BandwidthProduct— fT=3.4GHz(Typ)@IC=–35mA	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF544	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designedprimarilyforuseinhighfrequencyandmediumandhighresolutioncolorvideodisplaymonitorsaswellasotherapplicationsrequiringhighbreakdowncharacteristics. Features •SiliconNPN,highFrequency,highbreakdown,To-39packaged, Transistor •MaximumUnilate	MicrosemiMicrosemi Corporation 美高森美美高森美公司
MRF544	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designedprimarilyforuseinhighfrequencyandmediumandhighresolutioncolorvideodisplaymonitorsaswellasotherapplicationsrequiringhighbreakdowncharacteristics. Features •SiliconNPN,highFrequency,highbreakdownTransistor •MaximumUnilateralGain=13.5dB(t	ADPOW Advanced Power Technology
MRF545	PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: TheASIMRF545isdesignedforHighFrequencyandmediumandhighresolutioncolorvideodisplaymonitorsaswellasotherApplicationsrequiringhighbreakdowncharacteristics.	ASI Advanced Semiconductor
MRF545	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION: Designedprimarilyforuseinhighfrequencyandmediumandhighresolutioncolorvideodisplaymonitorsaswellasotherapplicationsrequiringhighbreakdowncharacteristics. Features •SiliconPNP,highFrequency,highbreakdown,To-39packaged, Transistor •MaximumUnilate	MicrosemiMicrosemi Corporation 美高森美美高森美公司
MRF553	RF LOW POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFLowPowerTransistor DesignedprimarilyforwidebandlargesignalpredriverstagesintheVHFfrequencyrange. •Specified@12.5V,175MHzCharacteristics OutputPower=1.5W MinimumGain=11.5dB Efficiency60(Typ) •CostEffectivePowerMacroPackag	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF553	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheVHFfrequencyrange. Features •Specified@12.5V,175MHzCharacteristics •OutputPower=1.5W •MinimumGain=11.5dB •Efficiency60(Typ) •CostEffectivePowerMacroPackage •ElectrolessTinPlatedLeadsforIm	ADPOW Advanced Power Technology
MRF553	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheVHFfrequencyrange. Features •Specified@12.5V,175MHzCharacteristics •OutputPower=1.5W •MinimumGain=11.5dB •Efficiency60(Typ) •CostEffectivePowerMacroPackage •ElectrolessTinPlatedLeadsforIm	MicrosemiMicrosemi Corporation 美高森美美高森美公司
MRF553	NPN SILICON RF TRANSISTOR DESCRIPTION: TheASIMRF553isdesignedforLowpoweramplifierapplications. FEATURES: •12.5V,175MHz. •POUT=1.5W •GP=11.5min. •η=60(Typ)	ASI Advanced Semiconductor
MRF553	RF MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheVHFfrequencyrange. Features •Specified@12.5V,175MHzCharacteristics •OutputPower=1.5W •MinimumGain=11.5dB •Efficiency60(Typ) •CostEffectivePowerMacroPackage •ElectrolessTinPlatedLeadsforIm	ADPOW Advanced Power Technology
MRF553G	RF MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheVHFfrequencyrange. Features •Specified@12.5V,175MHzCharacteristics •OutputPower=1.5W •MinimumGain=11.5dB •Efficiency60(Typ) •CostEffectivePowerMacroPackage •ElectrolessTinPlatedLeadsforIm	ADPOW Advanced Power Technology
MRF555	RF LOW POWER TRANSISTOR NPN SILICON TheRFLine NPNSiliconRFLowPowerTransistor DesignedprimarilyforwidebandlargesignalpredriverstagesintheUHFfrequencyrange. •Specified@12.5V,470MHzCharacteristics@Pout=1.5W CommonEmitterPowerGain=12.5dB(Typ) Efficiency60(Typ) •CostEffectivePowerMac	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF555	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,470MHzCharacteristics •OutputPower=1.5W •MinimumGain=11dB •Efficiency60(Typ) •CostEffectivePowerMacroPackage •ElectrolessTinPlatedLeadsforImpr	MicrosemiMicrosemi Corporation 美高森美美高森美公司
MRF555	NPN SILICON RF TRANSISTOR DESCRIPTION: TheASIMRF555isdesignedforWidebandlargesignalstagesintheUHFfrequencyrange. FEATURES: •12.5V,470MHz. •POUT=1.5W •GP=11min. •η=60(Typ)	ASI Advanced Semiconductor
MRF555	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,470MHzCharacteristics •OutputPower=1.5W •MinimumGain=11dB •Efficiency60(Typ) •CostEffectivePowerMacroPackage •ElectrolessTinPlatedLeadsforImpr	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MRF557	RF LOW POWER TRANSISTOR NPN SILICON TheRFLine NPNSilicon RFLowPowerTransistor Designedprimarilyforwidebandlargesignalpredriverstagesinthe800MHzfrequencyrange. •Specified@12.5V,870MHzCharacteristics OutputPower=1.5W MinimumGain=8.0dB Efficiency60(Typ) •CostEffectivePowerMacroPa	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF557	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,870MHzCharacteristics •OutputPower=1.5W •MinimumGain=8dB •Efficiency60(Typ) •CostEffectivePowerMacroPackage •ElectrolessTinPlatedLeadsforImpro	ADPOW Advanced Power Technology
MRF557G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,870MHzCharacteristics •OutputPower=1.5W •MinimumGain=8dB •Efficiency60(Typ) •CostEffectivePowerMacroPackage •ElectrolessTinPlatedLeadsforImpro	ADPOW Advanced Power Technology
MRF559	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,870MHzCharacteristics •OutputPower=.5W •MinimumGain=8.0dB •Efficiency50 •CostEffectiveMacroXPackage •ElectrolessTinPlatedLeadsforImprovedSold	MicrosemiMicrosemi Corporation 美高森美美高森美公司
MRF559	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,870MHzCharacteristics •OutputPower=.5W •MinimumGain=8.0dB •Efficiency50 •CostEffectiveMacroXPackage •ElectrolessTinPlatedLeadsforImprovedSold	ADPOW Advanced Power Technology
MRF559G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,870MHzCharacteristics •OutputPower=.5W •MinimumGain=8.0dB •Efficiency50 •CostEffectiveMacroXPackage •ElectrolessTinPlatedLeadsforImprovedSold	ADPOW Advanced Power Technology
MRF571	NPN Silicon High-Frequency Transistors TheRFLine NPNSiliconHigh-FrequencyTransistors Designedforlownoise,widedynamicrangefront–endamplifiersandlow–noiseVCO’s.Availableinasurface–mountableplasticpackages.ThisMotorolaseriesofsmall–signalplastictransistorsofferssuperiorqualityandperformanceatlowcost.	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF571	NPN SILICON RF TRANSISTOR DESCRIPTION: TheASIMRF571isDesignedforlow-noise,widedynamicrangefrontendamplifiers. Applicationsupto2.0GHz. FEATURES: •LowNoiseFigure •HighGain •Omnigold™MetalizationSystem	ASI Advanced Semiconductor
MRF571	NPN Silicon High-Frequency Transistors NPNSiliconHigh-FrequencyTransistors ●HighGain-BandwidthProduct fT=8.0GHz(Typ)@50mA ●LowNoiseFigure NFmin=1.6dB(Typ)@f=1.0GHz	AAC American Accurate Components, Inc.
MRF571	NPN SILICON HIGH FREQUENCY TRANSISTORS TheRFLine NPNSILICONHIGHFREQUENCYTRANSISTORS ...designedforlow-noise,widedynamicrangefrontendamplifiers,low-noiseVCOs,andmicrowavepowermultipliers. •LowNoise •HighGain •AvailableinLowCostPlastic,HighReliabilityCeramicorDie •State-of-the-ArtTechnology	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MRF5711LT1	NPN Silicon High-Frequency Transistors TheRFLine NPNSiliconHigh-FrequencyTransistors Designedforlownoise,widedynamicrangefront–endamplifiersandlow–noiseVCO’s.Availableinasurface–mountableplasticpackages.ThisMotorolaseriesofsmall–signalplastictransistorsofferssuperiorqualityandperformanceatlowcost.	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF572	SILICON NPN RF TRANSISTOR DESCRIPTION: TheMRF572isDesignedforLowNoiseGeneralPurposeVHF,UHFAmplifierandOscillatorApplications.	ASI Advanced Semiconductor
MRF572	NPN SILICON HIGH FREQUENCY TRANSISTORS TheRFLine NPNSILICONHIGHFREQUENCYTRANSISTORS ...designedforlow-noise,widedynamicrangefrontendamplifiers,low-noiseVCOs,andmicrowavepowermultipliers. •LowNoise •HighGain •AvailableinLowCostPlastic,HighReliabilityCeramicorDie •State-of-the-ArtTechnology	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MRF577T1	The RF Small Signal Line NPN Silicon High-Frequency Transistor TheRFSmallSignalLine NPNSiliconHigh-FrequencyTransistor Designedforlownoise,widedynamicrangefrontendamplifiersatfrequenciesto1.5GHz.Specificallyaimedatportablecommunicationdevicessuchaspagersandhand–heldphones. •LowNoiseFigure NF=1.5dB(Typ)@1.0GHz	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF581	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features •LowNoise-2.5dB@500MHZ •GainatOptimumNoiseFigure=15.5dB@500MHz •Ftau-5.0GHz@10v,75mA •CostEffectiveMacroXPackage	MicrosemiMicrosemi Corporation 美高森美美高森美公司
MRF581	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features •LowNoise-2.5dB@500MHZ •GainatOptimumNoiseFigure=15.5dB@500MHz •Ftau-5.0GHz@10v,75mA •CostEffectiveMacroXPackage	ADPOW Advanced Power Technology
MRF581	NPN SILICON RF TRANSISTOR DESCRIPTION: TheMRF581isDesignedforHighcurrentlowPowerAmplifierApplicationsupto1.0GHz. FEATURES: •LowNoiseFigure •LowIntermodulationDistortion •HighGain •Omnigold™MetalizationSystem	ASI Advanced Semiconductor
MRF581	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features •LowNoise-2.5dB@500MHZ •GainatOptimumNoiseFigure=15.5dB@500MHz •Ftau-5.0GHz@10v,75mA •CostEffectiveMacroXPackage	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司
MRF5811LT1	LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON TheRFLine NPNSilicon High-FrequencyTransistor Designedforhighcurrent,lowpoweramplifiersupto1.0GHz. •LowNoise(2.0dB@500MHz) •LowIntermodulationDistortion •HighGain •State–of–the–ArtTechnology FineLineGeometry ArsenicEmitters GoldTopMetallization	MotorolaMotorola, Inc 摩托罗拉加尔文制造公司
MRF5812	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features •LowNoise-2.5dB@500MHZ •AssociatedGain=15.5dB@500MHz •Ftau-5.0GHz@10v,75mA •CostEffectiveSO-8package	MicrosemiMicrosemi Corporation 美高森美美高森美公司
MRF5812	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features •LowNoise-2.5dB@500MHZ •AssociatedGain=15.5dB@500MHz •Ftau-5.0GHz@10v,75mA •CostEffectiveSO-8package	ADPOW Advanced Power Technology
MRF5812	NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: TheASIMRF5812isDesignedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. FEATURES: •LowNoise–2.5dB@500MHz •Ftau–5.0GHz@10V,75mA •CostEffectiveSO-8package	ASI Advanced Semiconductor
MRF5812G	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features •LowNoise-2.5dB@500MHZ •AssociatedGain=15.5dB@500MHz •Ftau-5.0GHz@10v,75mA •CostEffectiveSO-8package	ADPOW Advanced Power Technology
MRF5812R1	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features •LowNoise-2.5dB@500MHZ •AssociatedGain=15.5dB@500MHz •Ftau-5.0GHz@10v,75mA •CostEffectiveSO-8package	MicrosemiMicrosemi Corporation 美高森美美高森美公司
MRF5812R2	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features •LowNoise-2.5dB@500MHZ •AssociatedGain=15.5dB@500MHz •Ftau-5.0GHz@10v,75mA •CostEffectiveSO-8package	MicrosemiMicrosemi Corporation 美高森美美高森美公司
MRF581A	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS DESCRIPTION:Designedforhighcurrent,lowpower,lownoise,amplifiersupto1.0GHz. Features •LowNoise-2.5dB@500MHZ •GainatOptimumNoiseFigure=15.5dB@500MHz •Ftau-5.0GHz@10v,75mA •CostEffectiveMacroXPackage	MicrosemiMicrosemi Corporation 美高森美美高森美公司

MRF5产品属性

类型
描述
型号
MRF5
制造商
Ferraz Shawmut

MRF5供应商更多...

更新时间：2025-6-25 18:56:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
中天科工半导体（深圳）有限公司	MRF501	MOTOROLA/摩托罗拉	专业铁帽	CAN4	67500	铁帽原装主营-可开原型号增税票	询价
深圳市科达星科技有限公司	MRF501	MOTOROLA	24+	TO-55r	9630	我们只做原装正品现货!量大价优!	询价
深圳市芯球通科技有限公司	MRF5812R1	ON(安森美)	23+		12993	公司只做原装正品,假一赔十	询价
深圳市诚利顺电子科技有限公司	MRF581	MOTORO	25+	SOP	6500	十七年专营原装现货一手货源,样品免费送	询价
深圳市科恒伟业电子有限公司	MRF581A	Microse	21+	VQFN	9800	只做原装正品假一赔十!正规渠道订货!	询价
深圳市得捷芯城科技有限公司	MRF5812GR1	Microsemi(美高森美)	24+	N/A	9498	原厂可订货,技术支持,直接渠道。可签保供合同	询价
深圳市振宏微科技有限公司	MRF5007	MOTOROL	23+	NA	7264	专做原装正品,假一罚百!	询价
华富测量(深圳)传感技术有限公司	MRF5003.。.谢频管	原厂	2023+	模块	600	专营模块,继电器,公司原装现货	询价
深圳市欧立现代科技有限公司	MRF581G	Microse	24+	to-51	5660	绝对原装现货,价格低,欢迎询购!	询价
千层芯半导体(深圳)有限公司	MRF5P21180R5	FREESCALE	24+	晶体管	710	“芯达集团”专营军工、宇航级IC原装进口现货	询价

MRF5芯片相关品牌

MRF5规格书下载地址

MRF5参数引脚图相关

MRF5数据表相关新闻

MRF448只有原装，现货，现货，现货！
MRF448只有原装，现货，现货，现货！
2024-5-21
MRF18060A
MRF18060A，全新原装现货0755-82732291当天发货或门市自取.
2020-12-7
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
MRF186，MRF187，MRF19030，MRF19030L，MRF19030LS，MRF19030S
2020-3-26
MRF6S21140HR5，MRF6S21140HS，MRF6S21140HSR5，MRF6S21190H
MRF6S21140HR5，MRF6S21140HS，MRF6S21140HSR5，MRF6S21190H
2020-3-26
MRF571
MRF571，全新原装当天发货或门市自取0755-82732291.
2019-11-30
MRF572
MRF572，全新原装当天发货或门市自取0755-82732291.
2019-11-30

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