RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package

NPN SILICON RF TRANSISTOR

DESCRIPTION: The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. FEATURES: • Low Noise Figure • Low Intermodulation Distortion • High Gain • Omnigold™ Metalization System

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package

封装/外壳：微型-X 陶瓷 84C 包装：卷带（TR） 描述：RF TRANS NPN 18V 5GHZ MICRO X 分立半导体产品 晶体管 - 双极（BJT）- 射频

NPN SILICON RF TRANSISTOR

Trans GP BJT NPN 18V 0.2A 4-Pin Macro-X

RF/Microwave Si BJT Power Devices & Pallets

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

文件：162.77 Kbytes Page：6 Pages

LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor Designed for high current, low power amplifiers up to 1.0 GHz. • Low Noise (2.0 dB @ 500 MHz) • Low Intermodulation Distortion • High Gain • State–of–the–Art Technology Fine Line Geometry Arsenic Emitters Gold Top Metallization

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package

NPN SILICON RF MICROWAVE TRANSISTOR

DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. FEATURES: • Low Noise – 2.5 dB @ 500 MHz • Ftau – 5.0 GHz @ 10 V, 75 mA • Cost Effective SO-8 package

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Associated Gain = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective SO-8 package

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features • Low Noise - 2.5 dB @ 500 MHZ • Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz • Ftau - 5.0 GHz @ 10v, 75mA • Cost Effective MacroX Package

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

文件：162.77 Kbytes Page：6 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：带 描述：RF TRANS NPN 15V 5GHZ 8SO 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

文件：162.77 Kbytes Page：6 Pages

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

文件：162.77 Kbytes Page：6 Pages

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

文件：162.77 Kbytes Page：6 Pages

PISTON SEALS

DESCRIPTION The BECA 580 - 581 profiles are U-ring type piston seals with offset rubber lips. APPLICATIONS Material handling - Lifting Presses Hydraulic cylinders

High Precision 10 V IC Reference

GENERAL DESCRIPTION The AD581 is a 3-pin, temperature compensated, monolithic, band gap voltage reference that provides a precise 10.00 V output from an unregulated input level ranging from 12 V to 30 V. FEATURES Laser trimmed to high accuracy 10.000 V ±5 mV (L and U models)

Clipped Sine Wave

文件：134.9 Kbytes Page：2 Pages

20 TO 500 MHz TO-8 CASCADABLE AMPLIFIERS

文件：175.92 Kbytes Page：2 Pages

High Precision 10 V IC Reference

文件：329.41 Kbytes Page：12 Pages