RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Pa

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impro

RF/Microwave Si BJT Power Devices & Pallets

RF LOW POWER TRANSISTOR NPN SILICON

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impro

High Intensity LED Panel Mount Indicators for 11/16' Mounting Hole Watertight

FEATURES / BENEFITS RoHS compliant Daylight viewability Tamperproof /Designed for high durability Long life, up to 100k hours Uniform illumination Low profile flat lens design APPLICATIONS The 557 Series LED Panel Mount Indicators incorporate both InGaN and AlInGaP techno

High Intensity LED Panel Mount Indicators for 11/16' Mounting Hole Watertight

FEATURES / BENEFITS RoHS compliant Bi-color feature allows for multiple indications Daylight viewability Tamperproof / Designed for high durability Long life, up to 100k hours Uniform illumination Low profile flat lens design

ITE Compliant LED Signal Modules

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LED Signal Modules and Pedestrian Signals

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11/16, 1 MOUNTING HOLE WATERTIGHT

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