RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the 800 MHz frequency range. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8.0 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Pa

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impro

RF/Microwave Si BJT Power Devices & Pallets

RF LOW POWER TRANSISTOR NPN SILICON

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 870 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 8 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impro

Amplifier Transistors(PNP Silicon)

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*

Amplifier Transistors

Amplifier Transistors PNP Silicon

Amplifier Transistors

Amplifier Transistors PNP Silicon

Amplifier Transistors(PNP Silicon)

Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available*