RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

Features · Silicon NPN, To-39 packaged VHF/UHF Transistor · Gpe = 10 dB (typ) @ 60 mA, 300 MHz · 3 GHz Current-Gain Bandwidth Product (min) @ 60mA · Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION: The ASI MRF517 is Designed for High Linearity Class A Amplifier Applications in the 100 to 500 MHz Frequency Range.

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：RF TRANS NPN 20V 4GHZ TO39 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

NPN RF POWER TRANSISTOR

DESCRIPTION: The MRF5174 is a Common Emitter Device Designed for Class A, AB and C Amplifier Applications in the 225 to 400 MHz Band. FEATURES INCLUDE: • High Gain • Gold Metallization • Emitter Ballasting

1NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF5175 is Designed for High Power Class C Amplifier in, 225 to 400 MHz Military Communication Equipment. FEATURES: • Class C Operation • PG = 11 dB at 5.0 W/400 MHz • Omnigold™ Metalization System

RF POWER TRANSISTOR NPN SILICON

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI MRF5176 is Designed for Class C Amplifiers in 225 to 400 MHz Military Communication Equipment. FEATURES: • PG = 10 dB Typical at 400 MHz • Economical .280” Stud Package • Omnigold™ Metalization System

30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

30W, 400MHZ RF POWER TRANSISTOR NPN SILICON

RF POWER TRANSISTOR NPN SILICON 30W, 400MHz

Darlington Transistors(NPN Silicon)

Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available*

NPN Darlington transistor

DESCRIPTION NPN Darlington transistor in a TO-92; SOT54 plastic package. PNP complement: BC516. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required.

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator

IP Library: Wide Range ESR Capacitor, Low Noise, 100mA Low Dropout Voltage Regulator ■ AnyESR REGULATOR ■ VERY COMMON OUTPUT DECOUPLING CERAMIC CAPACITOR ■ LOW CONSUMPTION : 250µA FULL LOAD ■ VERY LOW NOISE : 30µV ■ VERY LOW DROPOUT VOLTAGE : 50mV ■ HIGH PSRR : 60dB ■ STANDBY AND POWER DOWN

Silicon High Voltage Plastic Rectifier for Industrial and Microwave Oven

Features: ● Controlled Avalanche Characteristic Combined with the Ability to Dissipate Reverse Power ● Low Forward Voltage Drop ● Typical IR less than 0.1µA ● High Overload Surge Capacity

N-CHANNEL POWER MOS TRANSISTORS

HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors.