RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. Features • Silicon NPN, high Frequency, high breakdown, To-39 packaged, Transistor • Maximum Unilate

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for use in high frequency and medium and high resolution color video display monitors as well as other applications requiring high breakdown characteristics. Features • Silicon NPN, high Frequency, high breakdown Transistor • Maximum Unilateral Gain = 13.5 dB (t

封装/外壳：TO-39 包装：卷带（TR） 描述：RF TRANS NPN 70V 1.5GHZ TO39 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

PNP SILICON POWER TRANSISTORS

PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD543 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange. A marking code showing gate-source voltage (VGS) information is provided for matched pair applications. FEATURES •

UHF push-pull power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT268 balanced flange envelope, with two ceramic caps. The mounting flange provides the