SILICON NPN RF TRANSISTOR

DESCRIPTION: The MRF572is Designed for Low Noise General Purpose VHF,UHF Amplifier and Oscillator Applications.

NPN SILICON HIGH FREQUENCY TRANSISTORS

The RF Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for low-noise, wide dynamic range front end amplifiers, low-noise VCOs, and microwave power multipliers. • Low Noise • High Gain • Available in LowCost Plastic, High Reliability Ceramic orDie • State-of-the-Art Technology

Silicon Rectifier General Purpose, Fast Recovery

Features: ● Fast Switching ● Low Leakage ● Low Forward Voltage Drop ● High Current Capability ● High Current Surge ● High Reliability

Programmable analog compandor

DESCRIPTION The NE572 is a dual-channel, high-performance gain control circuit in which either channel may be used for dynamic range compression or expansion. Each channel has a full-wave rectifier to detect the average value of input signal, a linearized, temperature-compensated variable gain

Programmable analog compandor

DESCRIPTION The NE572 is a dual-channel, high-performance gain control circuit in which either channel may be used for dynamic range compression or expansion. Each channel has a full-wave rectifier to detect the average value of input signal, a linearized, temperature-compensated variable gain

N-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING

N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA572T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-70 • Directly driven by 3 V po

N-CHANNEL MOS FET 5-PIN 2 CIRCUITS FOR SWITCHING

N-CHANNEL MOS FET (5-PIN 2 CIRCUITS) FOR SWITCHING The µPA572T is a super-mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-70 • Directly driven by 3 V po