RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the VHF frequency range. • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB Efficiency 60 (Typ) • Cost Effective PowerMacro Packag

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF553 is designed for Low power amplifier applications. FEATURES: • 12.5 V, 175 MHz. • POUT = 1.5 W • GP = 11.5 min. • η = 60 (Typ)

RF MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im

包装：带 描述：RF TRANS NPN 16V 175MHZ 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

RF LOW POWER TRANSISTOR NPN SILICON

RF MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the VHF frequency range. Features • Specified @ 12.5 V, 175 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11.5 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Im

封装/外壳：超大功率 包装：带 描述：RF TRNS NPN 16V 175MHZ PWR MACRO 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=2.2kΩ)

Schottky Barrier Diode

Description: The NTE553 is a silicon schottky barrier diode in a DO35 style package for use in UHF and VHF switching applications. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Two Channel Direct Drive Speech Controller?

INTRODUCTION SNC553 is a two-channel voice synthesizer IC with PWM direct drive circuit. It built-in a 4-bit tiny controller with one 4-bit input port and two 4-bit I/O ports. By programming through the tiny controller in SNC553, user’s varied applications including voice section combination, key

CRT Display Video Output Amplifier

Features • Active load circuits • Wide bandwidth and high output voltage. Optimal for use in fH (horizontal deflection frequency) = 90 kHz class ultrahigh precision monitors. • Single 15-pin SIP molded package houses three channels.